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Effects of oxidation cross-linking and sintering additives (TiN, B) on the microstructure formation and heat-resistant performance of freestanding SiC(Ti, B) films synthesized from Ti, B-containing polycarbosilane (TiB-PCS) precursor were investigated. TiB-PCS green films were first cross-linked for 1 h, 2 h, 3 h and 4 h, respectively, and then pre-sintered at 950 °C. Finally, they were sintered at 1800 °C to complete the conversion from organic films to inorganic SiC(Ti, B) films. The results reveal that curing time has a great impact on the uniformity and density of SiC(Ti, B) films. TiB-PCS films cured for 3 h yield the best quality SiC(Ti, B) films, which are composed of β-SiC crystals, C clusters, α-SiC nano-crystals, a small amount of TiB 2 and B 4 C. TiB 2 and B 4 C are both steady phases which can inhibit abnormal growth of β-SiC, effectively reduce sintering temperature and help consume excess C from decomposition of amorphous SiO x C y . After high temperature annealing at 1500 °C, 1600 °C and 1700 °C in argon, SiC(Ti, B) films still keep excellent mechanical properties, which makes them attractive candidate materials for microelectromechanical systems (MEMS) used at ultra-high temperatures (exceeding 1500 °C). [ABSTRACT FROM AUTHOR]

Effects of oxidation cross-linking and sintering temperature on the microstructure evolution, thermal conductivity and electrical resistivity of continuous freestanding polymer-derived SiC films were investigated. The as-received films consisting of β-SiC nanocrystals embedded in amorphous SiO x C y and free carbon nanosheets were fabricated via melt spinning of polycarbosilane (PCS) precursors and cured for 3 h/10 h followed by pyrolysis from 900 °C to 1200 °C. Results reveal that nanoscale structure (β-SiC/SiO x C y /C free ) provides an ingenious strategy for constructing highly thermal conductive, highly insulating and highly flexible complexes. In particular, the 3 h-cured films sintered at 1200 °C with satisfying thermal conductivity (46.8 W m −1 K −1 ) and electrical resistivity (2.1 × 10 8 Ω m) are suitable for the realization of high-performance substrates. A remarkable synergistic effect (lattice vibration of β-SiC nanocrystals and close-packed SiO x C y , free-electron heat conduction of β-SiC and free carbon, and supporting role of oxygen vacancy) contributing to thermal conductivity improvement is proposed based on the analysis of microstructure, intrinsic properties and simulations. Eventually, the SiC films without additional dielectric layers are directly silk-screen printed with high-temperature silver paste and used as heat dissipation substrates for high-power LED devices via chip-on-board (COB) package. The final devices can emit bright light with low-junction temperature (52.6 °C) and good flexibility owing to the mono-layer SiC substrate with low thermal resistance and desirable mechanical properties. This work offers an effective approach to design and fabricate flexible heat dissipation ceramic substrates for thermal management in advanced electronic packaging fields. [ABSTRACT FROM AUTHOR]