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Inspired by the double-helix structure of biological DNA, low-volume fraction and high-strength Al 2 O 3 twisted honeycomb structures with characteristics similar to those of helical structures in the z -axis were prepared by digital light processing 3D printing technology. As the twist angle increased, the compressive strength of the fabricated Al 2 O 3 structure decreased, and the deformation mechanism of the Al 2 O 3 structures gradually changed from stretching-dominated to bending-dominated, which can be predicted by the Gibson–Ashby model. The relationship between the effective elastic modulus and the volume fraction that can be modified by varying the wall thickness was described by the Pabst–Gregorova exponential relationship. The compressive strength of the Al 2 O 3 structure with a twist angle of 0° can reach 62.4 MPa at a volume fraction of 13.3%, providing guidance to optimize lightweight structures of ceramics. [ABSTRACT FROM AUTHOR]

Nano-SiO 2 porous thermal insulating material (TIM) has drawn tremendous research interests due to its advantages of low density, high porosity and low thermal conductivity. However, its long-term stability in humid environment can be severely deteriorated by the high hydrophilicity resulting from tetrahedral coordination of oxygen and capillary effect of porous structure. It is still a great challenge to cost-effectively fabricate bulk TIM with superior hydrophobicity and consequent remarkable self-cleaning capability. Herein, via an oil-in-water microemulsion treatment, we have proposed a new strategy to construct 3D superior hydrophobic nano-SiO 2 porous TIM. The polymethylhydrosiloxane-modified TIM exhibits a large water contact angle of 166°, and corresponding excellent self-cleaning characteristic while maintaining low thermal conductivity of 0.031 W/m·K. Moreover, our high hydrophobicity of TIM exhibits excellent durability under high temperature up to 400 °C, high humidity of 100%, and chemical erosions. Detailed knowledge of the physical chemistry basis of the superior hydrophobic nano-SiO 2 porous TIM can provide great opportunity to fabricate advanced self-cleaning and heat insulating devices especially targeted for harsh environments. [ABSTRACT FROM AUTHOR]

Regarding advanced 5G mobile communication, microwave dielectric ceramics are considered as the most potential materials to develop new-generation base station resonators. Herein, ZnNb 2 O 6 ceramics with ε r of approximately 24 have been prepared using the solid-state reaction method, with tailored extra ZnO of x mol% (x = 1, 2 and 3). We have for the first time applied the P-V-L chemical bond theory to investigate ZnNb 2 O 6 ceramics with ZnO doping, by exploring the relationship of dielectric properties and chemical bond characteristics. Particularly, the Raman spectra demonstrates that the full width at half maximum of υ 1 (A g) vibration mode can exhibit significant correlation with the quality factor (Q × f). To further support the experimental study, we have also conducted the first-principle calculation of electron density difference via CASTEP package, which further confirms the change of temperature coefficient of resonance frequency (τ f). Our newly designed ZnNb 2 O 6 ceramics doped with 1 mol% ZnO exhibit excellent dielectric properties, i.e., ε r = 23.74, Q × f = 102,824 GHz and τ f = −55.38 ppm/°C, which demonstrates great potential to construct miniaturized 5G base station with advanced ceramic dielectrics. [ABSTRACT FROM AUTHOR]

We have optimized a CuO-doped silver paste to significantly improve the adhesion strength of silver thick film on AlN ceramic substrate, which can be widely applied in power electronic packaging applications. Via a combination of scanning electron microscope and X-ray diffraction, we have systematically studied the silver layer morphology on top of AlN ceramic substrate, and the interphases between the silver thick film and AlN substrate. Due to the CuAl 2 O 4 intermediate formed at the silver layer/AlN interface, the adhesion strength of silver thick film can be greatly improved. Particularly, the silver paste with 3 wt% nano-CuO sintered on AlN ceramic substrate exhibits high adhesion strength of 15.3 MPa with good electrical conductivity of 0.9 mΩ/□. [ABSTRACT FROM AUTHOR]

Ceramics joining has been widely applied in MEMS sensors, microwave and imaging devices as well as other ceramic packaging applications to fabricate multifunctional ceramic components. In this study, a glass frit with gradient thermal expansion coefficient (TEC) has been applied as the bonding material to join the ceramic of Al 2 O 3 and AlN. This glass frit consists of two types of glasses with different TEC. The Al 2 O 3 and AlN ceramics have been successfully joined with this glass frit in muffle furnace at 850 °C for 1 h. The bonding strength of Al 2 O 3 /AlN ceramic joined via this glass frit exceeds 40 MPa without any cracks in the joining interface, which is much superior compared with that of conventional glass frit bonding. Our work demonstrates that the gradient-TEC glass frit bonding is an effective method to join different types of ceramics. [ABSTRACT FROM AUTHOR]

PbO–ZnO–B 2 O 3 (PZB) glass with low-melting temperature has been widely applied in microelectromechanical systems (MEMS) packaging. However, the high thermal expansion coefficient (TEC) of PZB glass usually leads to strict packaging requirements. Here, in order to achieve ideal TEC, we have introduced β -eucryptite into PZB/ β -eucryptite composite glass and optimized the composite fabrication process. Firstly, PbO:ZnO:B 2 O 3 in mol ratio of 65:15:20 was selected as glass matrix owing to its low-melting temperature and good wettability. Then, β -eucryptite ceramics with ultra-low TEC were synthesized via a facile solid-state reaction method to optimize subsequent composite TEC value. The combination of corresponding material and device characterizations suggest that the pure phase and regular columnar grains of β -eucryptite ceramic can be obtained by sintering at 1450 °C for three hours, which can result in the lowest negative TEC of α 30-300°C = −10.74 × 10−6 K−1. Furthermore, regarding the PZB/ β -eucryptite composite glasses, systematic experiments demonstrated that the β -eucryptite introduction can greatly impact the TEC of matrix glass with only negligible effect on the softening point (T s). Importantly, composite glasses with TEC of α 30-300°C = 3.26 × 10−6 K−1, T s = 380 °C and wetting angle < 30° are ideal for MEMS packaging. This work implements optimized fabrication process to obtain low-melting PZB/ β -eucryptite composite glasses with ideal TEC values, which can be envisaged to be applied in advanced MEMS packaging applications. [ABSTRACT FROM AUTHOR]

The influence of BaO content (up to 15 mol%) on the crystallization behaviour, structure, thermal properties and microwave dielectric properties of the BaO-CaO-B 2 O 3 -SiO 2 glasses and glass-ceramics system was investigated. The glasses were produced by melting at 1400 °C and quenching into water, and the glass-ceramics were produced via heat treatment at temperatures between 750 and 800 °C. The results of X-ray diffraction analysis showed that increasing the BaO content raised the resistance of the glass against crystallization and favoured the transformation of β-CaSiO 3 and α-CaSiO 3 phases, which crystallized in the Ba-free and in low BaO content compositions, into SiO 2 and Ba 4 Si 6 O 16 , which crystallized in compositions with higher concentrations of BaO. The BaO content had little influence on the glass transition temperature ( T g ) and the linear coefficient of thermal expansion (CTE), but strongly reduced the softening point ( T s ). Even the addition of BaO as minor additives resulted in a dramatic reduction of the T s ; for example, the T s decreased from 902 °C for the Ba-free composition to 682 °C for the BaO-containing one (5%). Low values of the dielectric constant (5.9 ≤  ε r ≤ 6.63) and dielectric loss (1.12 × 10 −3 ≤ tan δ  ≤ 3.15 × 10 −3 ) were measured. [ABSTRACT FROM AUTHOR]

Perovskite ceramics with a formula of Ca 0.7 Ti 0.7 La 0.3 Al 0.3 O 3 (CTLA) were produced through a conventional solid-state reaction procedure following three different La 3+ -doping methods using powders of La 2 O 3 , or La 2 O 3 /Al 2 O 3 powder mixture, or LaAlO 3 . La 3+ doping favored grain growth and densification, affected the grain size distribution, and improved the dielectric properties of the produced sintered CTLA ceramics. The doping methods had a strong influence on these properties. More specifically, doping with La 2 O 3 and La 2 O 3 /Al 2 O 3 resulted in formation of solid solution, while a secondary phase formed in the CTLA ceramics doped with LaAlO 3 , which caused a coarsening of the microstructure and lowered the La 3+ doping effects on the dielectric properties. The experimental results suggest that La 3+ doping improves the dielectric properties of the sintered CTLA perovskite ceramics, which are further enhanced by doping with Al 3+ ions in small amounts. However, further increase of Al 3+ ions content jeopardizes them. [ABSTRACT FROM AUTHOR]

Ca 0.66 Ti 0.66 Sm 0.34 Al 0.34 O 3 (CTSA) ceramics were produced using a solid-state reaction method, and their sintering behavior, microwave dielectric properties, and microstructure were investigated. Sintering temperature affected the unit cell volume and the lattice parameters of the CTSA ceramics as well as the grain size distribution, the Gibbs free energy, the thermal expansion coefficient (CTE), and the dielectric properties (ε r , Q×f, τ f ). The samples sintered at 1500 °C displayed the best dielectric constant and Q×f, as 42.49 and 46069.86 GHz, respectively. [ABSTRACT FROM AUTHOR]

BaO-Sm 2 O 3 -5TiO 2 (BST5) ceramics with NdAlO 3 additions of up to 15 wt% were produced with a solid state reaction method, and their structural and microwave dielectric properties were determined. Experimental results showed that NdAlO 3 neither merged nor altered the orthorhombic tungsten bronze structure of the main phase of the produced ceramics (except for a shrinkage in the crystal lattice), but it was segregated in distinct grains in the microstructure of the produced ceramics. However, the amount of NdAlO 3 strongly influenced the densification and the microstructure (i.e. grain shape and size) of the produced ceramics. Analysis of the experimental results suggests that the microstructural features can be correlated to the dielectric properties of these ceramics. Accordingly, the dielectric constant (ε r ) and the temperature coefficient of resonant frequency (τ f ) of the produced BLT5 ceramics can be tuned with the amount of NdAlO 3 additions and the sintering process parameters. The best dielectric properties were achieved for BaO-Sm 2 O 3 -5TiO 2 ceramics with 7.5% NdAlO 3 (ε r =73.22, Q×f =10,300 GHz, and τ f =−1.05 ppm/°C). [ABSTRACT FROM AUTHOR]

Surface metallization of aluminum nitride is performed by a reactively thick film method. A layer of copper film is deposited on the surface of AlN ceramics. The morphology and composition of the metalized copper layer on ceramic substrate were investigated via scanning electron microscope (SEM) and X-ray diffraction (XRD). The interface layer between copper film and AlN substrate was examined through SEM, XRD and EDS. Reaction phases, Cu 2 O and intermediate phases (CuAlO 2 and CuAl 2 O 4 ), were detected at the interface layer. Subsequently, the formation process of these phases at the interface layer was discussed. And consequently, the relation within reaction phases and bonding strength was observed. Reaction phases play a key role in increasing bonding strength. The effect of these phases such as Cu 2 O and intermediate phases (CuAlO 2 and CuAl 2 O 4 ) on the mechanical property was discussed. Results show that the presence of Cu 2 O particles are detrimental to bonding strength. However, spinel CuAl 2 O 4 and isolated CuAlO 2 laminates at the interface layer can increase the bonding strength. The experimental results suggest that this thick film method is a useful technology for various metal-ceramics bonding. [ABSTRACT FROM AUTHOR]

Reaction sialon suspensions were prepared using 3-wt.% KD1 (a polyester/polyamine condensation copolymer) as dispersant in organic media of 60-vol.% methyletheylketone and 40-vol.% ethanol. Different homogenizing procedures were used and compared, such as: high energetic planetary milling, low energetic ball milling and ultrasonic disaggregation. The effect of different homogenizing routes and solids loading on the rheology of suspensions and on the properties of slip casting green bodies has been studied. The differences observed among the various mixing procedures could be attributed to the different degrees of disaggregation and therefore to different fractions of surface coverage of the reaction sialon powders by the dispersant. [Copyright &y& Elsevier]

The strong covalent bonding of SiC makes it difficult to be fully sintered using conventional sintering techniques. Therefore, electrical current-assisted sintering techniques such as spark plasma sintering are needed to sinter SiC. The finite numerical simulations have been generally used to predict and guide sintering processes of ceramics (i.e.TiC,AlO 3). In this work, the numerical simulations of the temperature distribution, electrical field and thermal field on the porous SiC cylindrical samples by Comsol were investigated in details. The influence of porosity on the temperature distribution and electrical field distribution of the SiC samples were analyzed. Both the maximum current density (1.19 × 107A/m2) and the maximum temperature (2030 °C) of the SPS device occurred at the punch/spacer interface. The temperature values at the centre of the samples were proportional to the porosity, and the temperatures at the center of the samples increased from ∼1960 °C to ∼2010 °C at t = 2000s, with the porosity increasing from 1% to 60%. The uniformity of the temperature distribution deteriorated as the porosity increases, and the temperature gradients between the center and edge of the samples with the porosity of 1% and 60%, were ∼80 °C and ∼130 °C at t = 2000s, respectively. [ABSTRACT FROM AUTHOR]

BaO-Sm 2 O 3 –5TiO 2 (BST) added by Al 2 O 3 was prepared by solid-state reaction method. The main phase is Ba 3.99 Sm 9.34 Ti 18 O 54 of orthorhombic tungsten bronze structure, and the secondary phase is Ba 1.18 Al 1.90 Ti 6.09 O 16 of tetragonal structure, which has two types of grains: one is grey and cubic, and the other is white and quasi-rectangular. Microstructure was characterized by XRD, SEM, and Raman spectra. Micromechanical properties of different phases were assessed by nanoindentation and micro-scratch tests with Berkovich indenter. Volume fractions of different phases obtained by statistical analysis of grid indentation are in good agreement with those obtained by XRD analysis. Vickers hardness method is more appropriate for the determination of the fracture toughness of dielectric ceramics. BST ceramic without addition of Al 2 O 3 has better mechanical properties than BST-A with addition of Al 2 O 3 , indicating that addition of Al 2 O 3 impairs the micromechanical properties of dielectric ceramics. [ABSTRACT FROM AUTHOR]

The high integration density of microelectronic devices leads to local heat accumulation, and effective heat dissipation and signal transmission of packaging materials have become the primary issues to be solved. However, existing polymer materials have difficulty meeting the requirements due to their unsatisfactory thermal conductivity and thermal expansion properties. In this work, we proposed the use of digital light processing (DLP) printing technology to construct a triply periodic minimum surface (TPMS) skeleton, and a continuous and efficient heat conduction path was successfully constructed in epoxy resin by impregnating h-BN on the skeleton surface. When the loading of h-BN was 20 vol%, the thermal conductivity of the TPMS(SiO 2)@BN/EP(BN) composites was 1.86 W/(m·K), which was 786 % higher than that of pure epoxy resin. In addition, the thermal expansion coefficient of the composites decreased by more than 70 %. At the test frequencies of 3∼10 MHz, the composites showed stable dielectric properties, and the dielectric constant was always maintained in a low range, between 3.85 and 4.15. This work has realized the transformation of the method for constructing a heat conduction path from disordered to ordered and from random to repeatable. This provides a new strategy for the selection of microelectronic packaging materials. [ABSTRACT FROM AUTHOR]

This paper presents that polyethylene glycol (PEG) synthesizes a form-stable phase change material (FS-PCM) with high thermal conductivity and considerable heat storage density. PEG was confined to the chain structure of epoxy resin (EP) via high-temperature melt blending and curing, which solves the leakage problem of PCMs during phase transformation. In order to increase the thermal conductivity and stability of the PEG/EP while maintaining good heat storage capacity and insulation ability, a low loading of reticulated porous Al 2 O 3 ceramic (RPC) was introduced into the PEG/EP matrix. RPC increases the thermal conductivity of FS-PCM by 5.5 times and the heat storage rate by 4 times. In addition, FS-PCM filled with 13.8 vol% RPCs has a coefficient of thermal expansion (CTE) of 80 ppm/K at 85–150 °C -a decrease of 62% over the matrix. Furthermore, the BN network is formed on RPC by vacuum impregnation technology, which further improves the thermal conductivity. This novel FS-PCM has excellent comprehensive properties and does not need for case package, indicating great prospects in thermal management and thermal storage. [ABSTRACT FROM AUTHOR]

Dense AlN ceramics with a thermal conductivity of 180W/m·K were obtained at the sintering temperature of 1750 °C using CaF2 and YF3 as additives. At temperatures below 1650 °C, the shrinkage of AlN ceramics is promoted by liquid (Ca,Y)F2 and Ca12Al14O32F2. Liquid CaYAlO4 mainly improves the densification of the sample when the sintering temperature increases to 1750 °C. The formation of liquid (Ca,Y)F2 at a relatively low temperature results in homogeneous YF3 distribution around the AlN particles, which benefits the removal of oxygen impurity in the AlN lattice, and thus a higher thermal conductivity. [Copyright &y& Elsevier]