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Titanium dioxide (TiO 2 ) films doped with different indium (In) concentrations have been prepared on SrTiO 3 (STO) substrates by high vacuum metalorganic chemical vapor deposition (MOCVD). X-ray diffraction (XRD) analyses revealed the TiO 2 films doped with low In concentrations to be [001] oriented anatase phase and the films with high In concentrations to present polycrystalline structures. The 1.8% In-doped TiO 2 film exhibited the best electrical conductivity properties with the lowest resistivity of 8.68×10 −2 Ω cm, a Hall mobility of 10.9 cm 2 V −1 s −1 and a carrier concentration of 6.5×10 18 cm −3 . The films showed excellent transparency with average transmittances of over 85% in the visible range. [ABSTRACT FROM AUTHOR]

Epitaxial indium oxide (In2O3) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500°C to 700°C. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In2O3 film deposited at 600°C exhibits the best crystalline quality. A clear epitaxial relationship of In2O3 (110)|MgO (110) with In2O3 [001]|MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In2O3 films is about 3.55–3.70eV. [ABSTRACT FROM AUTHOR]