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[Display omitted] • A novel OLED material with AIDF property has been designed and synthesized. • 1,10-Phenanthroline was selected as acceptor to construct OLED material for the first time. • Non-doped solution-processed OLED achieved EQE max up to nearly 20%. The development of efficient non-doped organic luminescent materials is challenging work due to the existence of aggregation-caused quenching (ACQ) effect in most of emitters. Here, 1,10-phenanthroline (Phen) with a rigid structure was selected as acceptor unit, which could well limit intramolecular vibrations and rotations. According to the Ullmann coupling, the twisted tert -butyldiphenylamine-modified carbazole named N 3, N 3, N 6, N 6-tetrakis(4-(tert -butyl)phenyl)-9H-carbazole-3,6-diamine (tBuPhACz) was introduced into 2, 9-position of the Phen to afford tBuPhACz-Phen as target material, which not only can limit the π–π stacking of acceptor, but also could obtain the TADF and AIE effects due to the twisted D-A structure. The non-doped neat film of tBuPhACz-Phen shown high photoluminescence quantum yield (PLQY) of 76.5 %. The non-doped solution-processed electroluminescent devices obtained high performance with the maximum external quantum (EQE max) up to 19.7 %. This result illustrated that the performance of this device is one of the best in the non-doped solution-processed OLEDs. [ABSTRACT FROM AUTHOR]

[Display omitted] • A highly sensitive near-infrared organic photodetector is demonstrated by the introduction of a p-doped hole transport layer. • The p-doping strategy leads to an upward shift of the energy levels, which increases the reverse electron injection barrier and charge collection efficiency simultaneously, thus augmenting the external quantum efficiency. • With improved conductivity and reduced trap states, the optimized device exhibits an ultra-low dark current density of 0.13nA cm−2 at −1 V and a highest specific detectivity of 6.02 × 1013 Jones at 800 nm. Organic photodetectors (OPDs) have gained increasing interest for their remarkable opto-electronic performances and compatibility with flexible devices. However, the commonly occurring high dark current and low detectivity severely reduce the performance and hinder the commercialization of near-infrared photodetectors. Here, we introduce a universal strategy of a p-doped hole transport layer to realize highly sensitive photodetectors. The dark current is significantly reduced by mitigating the reverse charge injection. As a result, the optimized OPD consisting of PM6:Y6 as active layer and 1 nm F 4 TCNQ p-doped PBTTT as hole transport layer exhibits an ultra-low dark current of 0.13nA cm−2 at −1 V, which is one the best performed near-infrared OPDs ever reported and comparable to commercialized silicon photodetectors. A maximum specific detectivity of 6.02 × 1013 Jones at 800 nm is achieved with improved charge collection efficiency and reduced trap states. The potential commercial application in image sensing is presented by integrating optimized OPDs into high-pixel-density arrays, further demonstrating the significance of the improved detection characteristics in capturing high-quality sample images with this technology. The insights provided in our study have profound implications for the design and optimization of high-performance OPDs spanning the ultraviolet to near-infrared range. [ABSTRACT FROM AUTHOR]