Search

[Display omitted] • Bilateral passivation strategy by PEACl doping and NPB post-treatment is proposed. • Construction of GHJ provides a favorable transport pathway for hole migration. • Achieving a PCE of 21.88% for PEACl-SnO 2 -NPB based PSCs with negligible hysteresis. • Improved moisture and thermal stability of PSCs by using synchronous regulation. Defects and inferior charge transport dynamics within devices are key issues that inhibit the improvements of photovoltaic performance and stability. Developing facile and feasible strategies for synchronous passivation of defects regarding charge transport layers (CTLs), perovskite films and their interfaces, and precise tuning of energy level structure, is a definite way to solve above problems. Herein, we develop a synergistic passivation strategy for perovskite films and bilateral interfaces to improve device performance. Firstly, an appropriate amount of phenylethylammonium chloride is adopted to modify SnO 2 electron transport layer (ETL). The complexation reaction between N atoms in –NH 2 and Sn4+ improve the agglomeration of SnO 2 nanoparticles and film quality of SnO 2 ETL. The presence of Cl− ions not only effectively fill oxygen vacancies within SnO 2 ETL, but also participate in regulating crystal growth dynamics of perovskite films, thus improving electron transport properties at interface. Subsequently, p-type conducting material N,N'-Bis-(1-naphthalenyl)-N,N'-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) is introduced into anti-solvent chlorobenzene during the preparation of perovskite films to further regulate the crystal quality and achieve full-range defect passivation. Particularly, the introduction of NPB helps to construct a gradient heterojunction between upper perovskite film and SpiroOMeTAD hole transport layer, thus reducing the accumulation of hole carriers near interface and further suppressing current–voltage hysteresis behavior of devices. Additionally, the hydrophobicity of NPB and full range of defect passivation greatly enhance the humidity and thermal stability of devices. Finally, a high power conversion efficiency of 21.88% is obtained with suppressed hysteresis and enhanced long-term stability. This work highlights the role of full-range defect passivation on CTLs, perovskite absorption layers and interfacial charge transport properties, which provide a novel concept for constructing high-performance and stable perovskite devices. [ABSTRACT FROM AUTHOR]

[Display omitted] • Gradient copper-doped nickel oxide was made as the HSL for Si PV. • The trade-off between interface recombination and built-in filed has been relaxed. • SOP strategy effective suppresses the Gd-NiO x /c-Si interface recombination. • A remarkable 20.3% efficiency was achieved for the proof-of-concept device. A prominent feature of photovoltaic devices is their ability to drive photo-generated charges to pathways of asymmetrical conductivity, guiding them to the corresponding electrodes. Under this guideline, the crystalline silicon (c-Si) solar cells dominate the photovoltaic (PV) market for decades and several optoelectronic losses and technological limitations are gradually emerging by now. To circumvent these issues, here, we replaced the doped-silicon emitter layer with a gradient copper-doped nickel oxide (Gd-NiO x), and incorporated a silicon oxide passivation (SOP) layer at the Gd-NiO x /c-Si interface, to construct the novel c-Si PV devices. Interestingly, it was observed that the Gd-NiO x hole selective layer can strengthen the built-in field by minimizing the front electrode/hole-selective layer barrier width and the SOP can reduce interface recombination simultaneously, thereby yielding a remarkable 20.3% efficiency for the proof-of-concept device. We believe the design proposed in this may be of interest for applications in PVs and other optoelectronic devices. [ABSTRACT FROM AUTHOR]

The fragile framework of the organic–inorganic metal halide perovskite has been strengthened for improving the stability of the PSCs by a multifunctional 2-amino-acetamidobenzotrifluoride (called BDP) with –NH 2 , C=O, and -CF 3 groups, simultaneously yielding a high efficiency of 21.62% for MAPbI 3 -based solar cells. [Display omitted] • A novel BDP-perovskite composite was developed for efficient and stable PSCs. • The BDP improved perovskite quality by retarding crystallization process. • The perovskite framework is reinforced by forming N-H...F bond with BDP. • The PCE of the BDP-treated device increased to 21.62% with a high V oc of 1.21 V. Perovskite solar cells (PSCs) are one of the most prospective photovoltaic devices because of their excellent photoelectric properties, yet their stability remains challenging. Apart from the reported passivation or encapsulation strategies, reinforcing the inherent framework of the perovskite is recognized as a substantial approach to stabilizing the PSCs. Herein, a multifunctional 2-amino-acetamidobenzotrifluoride (called BDP) with –NH 2 , C = O, and -CF 3 moieties is meticulously screened to strengthen the perovskite framework. The electron-donating groups of the BDP (–NH 2 and C = O) can simultaneously modify the crystallization process and achieve passivation, which devoted to reducing defect density; -CF 3 is used as a hydrophobic chemical stabilizer to form a moisture-resistant layer on the perovskite surface and suppress the MA+ ion migration by forming a hydrogen bond. Notably, the presence of the BDP also achieves a better energy level matching at the perovskite/hole transfer layer interface. Consequently, the power conversion efficiency (PCE) of MAPbI 3 solar cells is remarkably improved from 18.47% to 21.62%. Compared with the control devices, the PCE remains relatively stable under harsh external environmental conditions. Furthermore, the BDP also inhibits the lead leakage of PSCs, which is conducive to environmental applications. [ABSTRACT FROM AUTHOR]