1. A full range of defect passivation strategy targeting efficient and stable planar perovskite solar cells.
- Author
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Sun, Yansen, Yang, Shuo, Pang, Zhenyu, Jiang, Haipeng, Chi, Shaohua, Sun, Xiaoxu, Fan, Lin, Wang, Fengyou, Liu, Xiaoyan, Wei, Maobin, Yang, Lili, and Yang, Jinghai
- Subjects
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PASSIVATION , *SOLAR cells , *PEROVSKITE , *COMPLEXATION reactions , *ELECTRON transport , *CRYSTAL growth , *THERMAL stability - Abstract
[Display omitted] • Bilateral passivation strategy by PEACl doping and NPB post-treatment is proposed. • Construction of GHJ provides a favorable transport pathway for hole migration. • Achieving a PCE of 21.88% for PEACl-SnO 2 -NPB based PSCs with negligible hysteresis. • Improved moisture and thermal stability of PSCs by using synchronous regulation. Defects and inferior charge transport dynamics within devices are key issues that inhibit the improvements of photovoltaic performance and stability. Developing facile and feasible strategies for synchronous passivation of defects regarding charge transport layers (CTLs), perovskite films and their interfaces, and precise tuning of energy level structure, is a definite way to solve above problems. Herein, we develop a synergistic passivation strategy for perovskite films and bilateral interfaces to improve device performance. Firstly, an appropriate amount of phenylethylammonium chloride is adopted to modify SnO 2 electron transport layer (ETL). The complexation reaction between N atoms in –NH 2 and Sn4+ improve the agglomeration of SnO 2 nanoparticles and film quality of SnO 2 ETL. The presence of Cl− ions not only effectively fill oxygen vacancies within SnO 2 ETL, but also participate in regulating crystal growth dynamics of perovskite films, thus improving electron transport properties at interface. Subsequently, p-type conducting material N,N'-Bis-(1-naphthalenyl)-N,N'-bis-phenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) is introduced into anti-solvent chlorobenzene during the preparation of perovskite films to further regulate the crystal quality and achieve full-range defect passivation. Particularly, the introduction of NPB helps to construct a gradient heterojunction between upper perovskite film and SpiroOMeTAD hole transport layer, thus reducing the accumulation of hole carriers near interface and further suppressing current–voltage hysteresis behavior of devices. Additionally, the hydrophobicity of NPB and full range of defect passivation greatly enhance the humidity and thermal stability of devices. Finally, a high power conversion efficiency of 21.88% is obtained with suppressed hysteresis and enhanced long-term stability. This work highlights the role of full-range defect passivation on CTLs, perovskite absorption layers and interfacial charge transport properties, which provide a novel concept for constructing high-performance and stable perovskite devices. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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