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Your search keyword '"*PHASE change memory"' showing total 2 results
Start Over Descriptor "*PHASE change memory" Journal chemistry of materials Publisher american chemical society
2 results on '"*PHASE change memory"'

1. Combined Ligand Exchange and Substitution Reactionsin Atomic Layer Deposition of Conformal Ge2Sb2Te5Film for Phase Change Memory Application.

Author

Taeyong Eom, Taehong Gwon, Sijung Yoo, ByungJoon Choi, Moo-Sung Kim, Iain Buchanan, Sergei Ivanov, Manchao Xiao, and Cheol Seong Hwang

Subjects
*LIGAND exchange reactions, *PHASE change memory, *ATOMIC layer deposition, *GRAPHENE, *RELIABILITY in engineering
Abstract

Forphase change memories application, Ge–Sb–Te filmswere prepared by a stable and reliable atomic layer deposition (ALD)method. Ge(OC2H5)4, Sb(OC2H5)3, [(CH3)3Si]3Sb, and [(CH3)3Si]2Te wereused to deposit various layers with compositions that can be describedby combinations of GeTe2–Sb2Te layersincluding Ge2Sb2Te5at a substratetemperature as low as 70 °C. A shift in composition of Sb–Tefilms from Sb2Te3to Sb2Te compositionwas achieved by combining ligand exchange and substitution reactionbetween Sb in [(CH3)3Si]3Sb and Tein the Sb2Te3layer. This surface-limited ALDprocess allowed highly conformal, smooth, and reproducible film growthover a contact hole structure, highlighting the feasibility of phasechange memory applications. [ABSTRACT FROM AUTHOR]

Published
2015
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