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Your search keyword '"Freeman, Arthur"' showing total 19 results
Start Over Author "Freeman, Arthur" Journal chemistry of materials
19 results on '"Freeman, Arthur"'

2. Cs2Hg3S4: A Low-Dimensional Direct Bandgap Semiconductor

Author

Islam, Saiful M., primary, Vanishri, S., additional, Li, Hao, additional, Stoumpos, Constantinos C., additional, Peters, John. A., additional, Sebastian, Maria, additional, Liu, Zhifu, additional, Wang, Shichao, additional, Haynes, Alyssa S., additional, Im, Jino, additional, Freeman, Arthur J., additional, Wessels, Bruce, additional, and Kanatzidis, Mercouri G., additional

Published
2014
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4. Photoconductivity in Tl6SI4: A Novel Semiconductor for Hard Radiation Detection

Author

Nguyen, Sandy L., primary, Malliakas, Christos D., additional, Peters, John A., additional, Liu, Zhifu, additional, Im, Jino, additional, Zhao, Li-Dong, additional, Sebastian, Maria, additional, Jin, Hosub, additional, Li, Hao, additional, Johnsen, Simon, additional, Wessels, Bruce W., additional, Freeman, Arthur J., additional, and Kanatzidis, Mercouri G., additional

Published
2013
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7. CsHgInS3: a New Quaternary Semiconductor for γ-ray Detection

Author

Li, Hao, primary, Malliakas, Christos D., additional, Liu, Zhifu, additional, Peters, John A., additional, Jin, Hosub, additional, Morris, Collin D., additional, Zhao, Lidong, additional, Wessels, Bruce W., additional, Freeman, Arthur J., additional, and Kanatzidis, Mercouri G., additional

Published
2012
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11. Structural and Electrical Functionality of NiO Interfacial Films in Bulk Heterojunction Organic Solar Cells

Author

Irwin, Michael D., primary, Servaites, Jonathan D., additional, Buchholz, D. Bruce, additional, Leever, Benjamin J., additional, Liu, Jun, additional, Emery, Jonathan D., additional, Zhang, Ming, additional, Song, Jung-Hwan, additional, Durstock, Michael F., additional, Freeman, Arthur J., additional, Bedzyk, Michael J., additional, Hersam, Mark C., additional, Chang, Robert P. H., additional, Ratner, Mark A., additional, and Marks, Tobin J., additional

Published
2011
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12. Tuning the Properties of Transparent Oxide Conductors. Dopant Ion Size and Electronic Structure Effects on CdO-Based Transparent Conducting Oxides. Ga- and In-Doped CdO Thin Films Grown by MOCVD

Author

Jin, Shu, primary, Yang, Yu, additional, Medvedeva, Julia E., additional, Wang, Lian, additional, Li, Shuyou, additional, Cortes, Norma, additional, Ireland, John R., additional, Metz, Andrew W., additional, Ni, Jun, additional, Hersam, Mark C., additional, Freeman, Arthur J., additional, and Marks, Tobin J., additional

Published
2007
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19. Direct Gap Semiconductors Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5.

Author

Islam, Saiful M., Malliakas, Christos D., Sarma, Debajit, Maloney, David C., Stoumpos, Constantinos C., Kontsevoi, Oleg Y., Freeman, Arthur J., and Kanatzidis, Mercouri G.

Subjects
*SEMICONDUCTORS, *BAND gaps, *DENSITY functional theory, *X-ray photoelectron spectroscopy, *DIFFERENTIAL thermal analysis
Abstract

New quaternary thioiodides Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5 have been synthesized by isothermal heating as well as chemical vapor transport. Pb2BiS2I3 and Sn2BiS2I3 crystallize in the space group, Cmcm, with unit cell parameters a = 4.3214 (9), b = 14.258 (3), and c = 16.488 (3) Å; a = 4.2890 (6), b = 14.121(2), and c = 16.414 (3) Å, respectively. Sn2BiSI5 adopts a unique crystal structure that crystallizes in C2/m with cell parameters a = 14.175 (3), b = 4.3985 (9), c = 21.625 (4) Å, and β = 98.90(3)°. The crystal structures of Pb2BiS2I3 and Sn2BiS2I3 are strongly anisotropic and can be described as three-dimensional networks that are composed of parallel infinite ribbons of [M4S2I4] (M = Pb, Sn, Bi) running along the crystallographic c-axis. The crystal structure of Sn2BiSI5 is a homologue of the M2BiS2I3 (M = Pb, Sn) which has two successive ribbons of [M4S2I4] separated by two interstitial (Sn1-xBixI6) octahedral units. These compounds were characterized by scanning electron microscopy, differential thermal analysis, and X-ray photoelectron spectroscopy. Pb2SbS2I3, Pb2BiS2I3, "Pb2Sb1-xBixS2I3" (x ∼ 0.4), Sn2BiS2I3 and Sn2BiSI5 are highly resistive and exhibit electrical resistivities of 3.0 GΩ cm, 100 MΩ cm, 65 MΩ cm, 1.2 MΩ cm, and 34 MΩ cm, respectively, at room temperature. Pb2BiS2I3, Sn2BiS2I3, Pb2SbS2I3, "Pb2Sb1-xBixS2I3" (x ∼ 0.4), and Sn2BiSI5 are semiconductors with bandgaps of 1.60, 1.22, 1.92, 1.66, and 1.32 eV, respectively. The electronic band structures of Pb2BiS2I3, Sn2BiS2I3, and Sn2BiSI5, calculated using density functional theory, show that all compounds are direct bandgap semiconductors. [ABSTRACT FROM AUTHOR]

Published
2016
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