1. Nonthermal Plasma-Synthesized Phosphorus–Boron co-Doped Si Nanocrystals: A New Approach to Nontoxic NIR-Emitters
- Author
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Gregory F. Pach, Rens Limpens, and Nathan R. Neale
- Subjects
Range (particle radiation) ,Photoluminescence ,Materials science ,Band gap ,General Chemical Engineering ,Analytical chemistry ,Quantum yield ,chemistry.chemical_element ,02 engineering and technology ,General Chemistry ,Plasma ,Nonthermal plasma ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,chemistry ,Nanocrystal ,Materials Chemistry ,0210 nano-technology ,Boron - Abstract
We report on the successful creation of nonthermal plasma-synthesized phorphorus and boron co-doped Si nanocrystals (PB:Si NCs) with diameters (DNC) ranging from 2.9 to 7.3 nm. Peak photoluminescence (PL) emission energies for all PB:Si NC diameters are ca. 400–500 meV lower than the excitonic emission values in intrinsic Si NCs, which can be attributed to prevalent donor–acceptor (D–A) transitions within the co-doped system. This D–A transition model is further evidenced by PL lifetimes within the range of 40–80 μs, faster than what is observed for intrinsic Si NCs. By reducing the level of confinement within PB:Si NCs (i.e., DNC > 4 nm), we are able to red-shift the near-infrared (NIR)-emitting D–A transitions to below the band gap of bulk Si (1.12 eV). We quantify the PL quantum yield (PLQY) for a range of DNC and show that the plasma method can achieve reasonably high PLQY values (12% for DNC = 2.9 nm), even without any optimization of the synthesis or surface chemistry. We posit that perfect charge c...
- Published
- 2019
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