1. Anomalous Conductivity Tailored by Domain-Boundary Transport in Crystalline Bismuth Vanadate Photoanodes
- Author
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Huolin L. Xin, Jiajie Cen, Qiyuan Wu, Lihua Zhang, Jun Li, Wenrui Zhang, Jing Tao, Danhua Yan, Mingzhao Liu, and Alexander Orlov
- Subjects
Electron mobility ,Materials science ,business.industry ,General Chemical Engineering ,Photoelectrochemistry ,02 engineering and technology ,General Chemistry ,Conductivity ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Pulsed laser deposition ,chemistry.chemical_compound ,Semiconductor ,chemistry ,Chemical physics ,Electrical resistivity and conductivity ,Bismuth vanadate ,Materials Chemistry ,Thin film ,0210 nano-technology ,business - Abstract
Carrier transport in semiconductor photoelectrodes strongly correlates with intrinsic material characteristics including carrier mobility and diffusion length, and extrinsic structural imperfections including mobile charged defects at domain boundaries, which collectively determines the photoelectrochemistry (PEC) performance. Here we elucidate the interplay between intrinsic carrier transport, domain-boundary-induced conductivity, and PEC water oxidation in the model photoanode of bismuth vanadate (BiVO4). In particular, epitaxial single-domain BiVO4 and c-axis-oriented multidomain BiVO4 thin films are fabricated using pulsed laser deposition to decouple the intrinsic and extrinsic carrier transport. In addition to the low intrinsic conductivity that is due to the small-polaron transport within BiVO4 domains, we identify anomalously high electrical conductivity arising from vertical domain boundaries for multidomain BiVO4 films. Local domain-boundary conduction compensates the inherently poor electron tr...
- Published
- 2018