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Your search keyword '"Slawomir Podsiadlo"' showing total 3 results
Start Over Author "Slawomir Podsiadlo" Journal chemistry of materials
3 results on '"Slawomir Podsiadlo"'

1. New Chemical Method of Obtaining Thick Ga1-xMnxN Layers: Prospective Spintronic Material

Author

Krzysztof Wozniak, Lukasz Dobrzycki, Adam Barcz, Andrzej Twardowski, Rafal Jakiela, Michal Kaminski, Pawel Dominik, Slawomir Podsiadlo, Marcin Zajac, Jaroslaw Mizera, R. Bacewicz, and Marek Psoda

Subjects
Diffraction, Superconductivity, Sublimation sandwich method, Materials science, Extended X-ray absorption fine structure, Spintronics, General Chemical Engineering, Analytical chemistry, General Chemistry, Characterization (materials science), Crystallography, Paramagnetism, Atom, Materials Chemistry
Abstract

The synthesis and characterization of Ga 1-x Mn x N thick layers are reported. The layers were prepared by the modified sublimation sandwich method (SSM) from GaN powder and powdered Mn sources and reacted with ammonia. Ga 1-x Mn x N layers having a current maximum size of 60 μm thickness and 10 mm x 10 mm area were obtained. The crystals of best crystalline quality were obtained with a growth rate of 25 μm/h. SIMS measurements showed the presence of layers containing up to 4 atom % Mn. Measurements involving X-ray diffraction (structure refinement), rocking curves, map of reflections, and EXAFS confirmed good structural properties without phase separation. The measurements carried out by a superconducting quantum interferometer showed that the material revealed typical paramagnetic properties.

Published
2007
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2. Synthesis of Bulk Ga1-xMnxN: A Prospective Spintronic Material

Author

Slawomir Podsiadlo, L. Dobrzycki, Wojciech Gebicki, Andrzej Twardowski, J. Gosk, Krzysztof Wozniak, T. Szyszko, M. Zajac, and R. Bacewicz

Subjects
chemistry.chemical_classification, Materials science, Condensed matter physics, Spintronics, General Chemical Engineering, Doping, Binary compound, Gallium nitride, General Chemistry, chemistry.chemical_compound, Magnetization, chemistry, Ferromagnetism, Materials Chemistry, Single crystal, Inorganic compound
Abstract

Ga1-xMnxN, heavily p-type doped, should reveal ferromagnetic ordering at ambient temperatures. Here we report a method of obtaining free-standing single crystals of Ga1-xMnxN. The method of co-doping with Mn and Si was also used. The dimensions of the crystals obtained were up to 4.8 × 2.5 × 0.4 mm.

Published
2003
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3. New Chemical Method of Obtaining Thick Ga1-xMnxN Layers:  Prospective Spintronic Material.

Author

Michal Kaminski, Slawomir Podsiadlo, Pawel Dominik, Krzysztof Wozniak, Lukasz Dobrzycki, Rafal Jakiela, Adam Barcz, Marek Psoda, Jaroslaw Mizera, Rajmund Bacewicz, Marcin Zajac, and Andrzej Twardowski

Subjects
*SPINTRONICS, *SUBLIMATION (Chemistry), *GALLIUM nitride, *X-ray diffraction
Abstract

The synthesis and characterization of Ga1-xMnxN thick layers are reported. The layers were prepared by the modified sublimation sandwich method (SSM) from GaN powder and powdered Mn sources and reacted with ammonia. Ga1-xMnxN layers having a current maximum size of 60 m thickness and 10 mm × 10 mm area were obtained. The crystals of best crystalline quality were obtained with a growth rate of 25 m/h. SIMS measurements showed the presence of layers containing up to 4 atom % Mn. Measurements involving X-ray diffraction (structure refinement), rocking curves, map of reflections, and EXAFS confirmed good structural properties without phase separation. The measurements carried out by a superconducting quantum interferometer showed that the material revealed typical paramagnetic properties. [ABSTRACT FROM AUTHOR]

Published
2007
Full Text
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