Search

The Acrylate resin layer has lower dielectric constant(e≈3.5),better optical transparency,and can be spin-coated as a flat surface film easily.By using resin as passivation layer in the array process,the vertical gap is increased between the Common ITO and bus line and plannar the devices.This reduces unwanted capacitive coupling and enables the pixel electrode to be extended over the gate and data lines,thus increasing aperture area,specifi-cally decreases power.In this work,there were some problems between the resin passivation layer and pixel ITO,such as Mo attack,missing ITO and so on.After optimizing the process of ITO Etching,photosensitive resin and non-photosensitive resin perfectly match with ITO etchant and Resin Coating,the resin passivation layer is sucessfully applied to the TFT-LCD.

In the trend of miniaturization narrow frame and fine wiring structure,the TFT-LCD tends to developing for large margin of design and high real substrate utilization rate.The passivation layer deposit parameters were changed to decrease the size of via hole which connected the pixel electrode and drain electrode were studied.Through the experiments design of changing main parameters to minimize via hole of passivation layer(haze,undercut,Top-PVX deposit thickness,Top-PVX deposit pressure),a solution to minimize the via hole about 20%~30% without changing the etch conditions was found.The electronic parameter measurement was evaluated(Ion,Ioff,Vth,Mobility) and finally one better solution to minimize via hole size was obtained.Therefore,the products quality was improved also.