1. Investigation on Near Band Edge UV Luminescence of ZnO Thin Films
- Author
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曹培江 Cao Pei-jiang, 马晓翠 Ma Xiao-Cui, 贾芳 Jia Fang, 朱德亮 Zhu De-liang, 柳文军 Liu Wen-jun, 吕有明 Lv You-ming, 黎小平 Li Xiao-Ping, and 宿世臣 Su Shi-chen
- Subjects
Radiation ,Materials science ,Photoluminescence ,Exciton ,Binding energy ,Analytical chemistry ,Condensed Matter Physics ,Acceptor ,Electronic, Optical and Magnetic Materials ,Pulsed laser deposition ,visual_art ,visual_art.visual_art_medium ,Ceramic ,Thin film ,Luminescence - Abstract
High orientated undoped ZnO thin films were prepared on c-Al2O3 substrates by pulsed laser deposition(PLD) method and using ZnO ceramic target as resource material.The photoluminescence(PL) origin of the ZnO thin films was discussed in detailed.PL spectrum of ZnO thin films is dominated by donor-bound exciton(D0X)emission at low temperatures while the free exciton transition(FX) gradually dominates the spectrum at higher temperatures.It notes that one emission band A at around 3.309 eV(T=10 K) can be clearly observed with increase in temperature up to room temperature.The mechanism of this emission band was investigated by the temperature dependence of PL spectra.The results can be attributed to the transition of conduction band electrons to acceptors(e,A0),in which the acceptor binding energy was approximately 129 meV.However,the formation mechanism of the acceptor states need be investigated further.
- Published
- 2012