1. Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier.
- Author
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Ma Xiao, Yu Hui, Quan Si, Yang Li, Pan Cai, Yang Ling, Wang Hao, Zhang Jin, Cheng and, and Hao Yue
- Subjects
GALLIUM nitride ,MODULATION-doped field-effect transistors ,MICROFABRICATION ,GATE array circuits ,ANNEALING of crystals ,PLASMA gases ,ELECTRIC conductivity - Abstract
An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around [?]1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs ([?]3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-um gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress. [ABSTRACT FROM AUTHOR]
- Published
- 2011
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