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In this paper, an MoOx film is deposited on a polyethylene terephthalate (PET) substrate as a buffer layer to improve the surface roughness of the flexible PET substrate. With an optimized MoOx thickness of 100 nm, the surface roughness of the PET substrate can be reduced to a very small value of 0.273 nm (much less than 0.585 nm of the pure PET). Flexible white top-emitting organic light-emitting diodes (TEOLEDs) with red and blue dual phosphorescent emitting layers are constructed based on a low-reflectivity Sm/Ag semi-transparent cathode. The flexible white emission exhibits the best luminance and current injection characteristics with the 100-nm-thick MoOx buffer layer and this result indicates that a smooth substrate is beneficial to the enhancement of device electrical and electroluminescence performances. However, the white TEOLED with a 50-nm-thick MoOx buffer layer exhibits a maximum current efficiency of 4.64 cd/A and a power efficiency of 1.9 lm/W, slightly higher than those with a 100-nm MoOx buffer layer, which is mainly due to an obvious intensity enhancement but limited current increases in 50-nm MoOx-based white TEOLED. The change amplitudes of the Commission International de l'Eclairage (CIE) chromaticity coordinates are less than (0.016, 0.005) for all devices in a wide luminance range over 100 cd/m2, indicating an excellent color stability in our white flexible TEOLEDs. Additionally, the flexible white TEOLED with an MoOx buffer layer shows excellent flexibility to withstand more than 500 bending times under a curvature radius of approximately 9 mm. Research demonstrates that it is mainly attributed to the high surface energy of the MoOx buffer layer, which is conducible to the improvement of the surface adhesion to the PET substrate and the Ag anode. [ABSTRACT FROM AUTHOR]

Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap—mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor (FET) devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations. [ABSTRACT FROM AUTHOR]

We present a continuous-wave squeezed vacuum generation system at a telecommunication wavelength of 1.3 μm. By employing a home-made single-frequency Nd:YVO4 laser with dual wavelength outputs as the pump source, via an optical parameter oscillator based on periodically poled KTP, a squeezed vacuum of 6.1 dB±0.1 dB below the shot noise limit at 1342 nm is experimentally measured. This system could be utilized for demonstrating practical quantum information networks. [ABSTRACT FROM AUTHOR]

We observe the phenomenon of priority oscillation of the unexpected σ-polarization in high-power Nd:YVO4 ring laser. The severe thermal lens of the σ-polarized lasing, compared with the π-polarized lasing, is the only reason for the phenomenon. By designing a wedge Nd:YVO4 crystal as the gain medium, the unexpected σ-polarization is completely suppressed in the entire range of pump powers, and the polarization stability of the expected π-polarized output is enhanced. With the output power increasing from threshold to the maximum power, no σ-polarization lasing is observed. As a result, 25.3 W of stable single-frequency laser output at 532 nm is experimentally demonstrated. [ABSTRACT FROM AUTHOR]

A novel plasmonic polarization filter based on the diamond-shape photonic crystal fiber (PCF) is proposed. The resonant coupling characteristics of the PCF polarization filter are investigated by the full-vector finite-element method. By optimizing the geometric parameters of the PCF, when the fiber length is 5 mm, the polarization filter has a bandwidth of 990 nm and an extinction ratio (ER) of lower than –20 dB. Moreover, a single wavelength polarization filter can also be achieved, along with an ER of –279.78 dB at wavelength 1.55 μm. It is believed that the proposed PCF polarization filter will be very useful in laser and optical communication systems. [ABSTRACT FROM AUTHOR]

The impact of the variations of threshold voltage (Vth) and hold voltage (Vhold) of threshold switching (TS) selector in 1S1R crossbar array is investigated. Based on ON/OFF state I–V curves measurements from a large number of Ag-filament TS selectors, Vth and Vhold are extracted and their variations distribution expressions are obtained, which are then employed to evaluate the impact on read process and write process in 32 × 32 1S1R crossbar array under different bias schemes. The results indicate that Vth and Vhold variations of TS selector can lead to degradation of 1S1R array performance parameters, such as minimum read/write voltage, bit error rate (BER), and power consumption. For the read process, a small Vhold variation not only results in the minimum read voltage increasing but it also leads to serious degradation of BER. As the standard deviation of Vhold and Vth increases, the BER and the power consumption of 1S1R crossbar array under 1/2 bias, 1/3 bias, and floating scheme degrade, and the case under 1/2 bias tends to be more serious compared with other two schemes. For the write process, the minimum write voltage also increases with the variation of Vhold from small to large value. A slight increase of Vth standard deviation not only decreases write power efficiency markedly but also increases write power consumption. These results have reference significance to understand the voltage variation impacts and design of selector properly. [ABSTRACT FROM AUTHOR]

In situ synchrotron angle-dispersive x-ray diffraction experiments on niobium powders have been conducted at pressures up to 61 GPa and room temperature using the diamond anvil cell technique. From the full width at half maximum of the measured diffraction lines, the yield strength was derived with the line-width analysis theory. The niobium powder sample was found to be compressed more packed firstly and then yielded at ∼14 GPa–18 GPa. Following an initial increase in the yield strength with pressure, an obvious decrease was observed occurring at ∼42 GPa–47 GPa accompanying with a typical pressure dependence above 47 GPa. The experimentally observed anomalous softening of the yield strength in niobium surprisingly follows the trend of the predicted unusual softening in the shear modulus by the recent theoretical investigations. The possible mechanisms, applicable to interpret the yield strength softening of materials at high pressure, were also discussed in detail. [ABSTRACT FROM AUTHOR]

The application of high pressure can fundamentally modify the crystalline and electronic structures of elements as well as their chemical reactivity, which could lead to the formation of novel materials. Here, we explore the reactivity of lithium with sodium under high pressure, using a swarm structure searching techniques combined with first-principles calculations, which identify a thermodynamically stable Li–Na compound adopting an orthorhombic oP8 phase at pressure above 355 GPa. The formation of Li–Na may be a consequence of strong concentration of electrons transfering from the lithium and the sodium atoms into the interstitial sites, which also leads to open a relatively wide band gap for LiNa-oP8. This is substantially different from atoms sharing or exchanging electrons in common compounds and alloys. In addition, lattice-dynamic calculations indicate that LiNa-oP8 remains dynamically stable when pressure decompresses down to 70 GPa. [ABSTRACT FROM AUTHOR]

The high-pressure polymorphs and structural transformation of Sn were experimentally investigated using angle-dispersive synchrotron x-ray diffraction up to 108.9 GPa. The results show that at least at 12.8 GPa β-Sn→bct structure transformation was completed and no two-phase coexistence was found. By using a long-wavelength x-ray, we resolved the diffraction peaks splitting and discovered the formation of a new distorted orthorhombic structure bco from the bct structure at 31.8 GPa. The variation of the lattice parameters and their ratios with pressure further validate the observation of the bco polymorph. The bcc structure appears at 40.9 GPa and coexists with the bco phase throughout a wide pressure range of 40.9 GPa–73.1 GPa. Above 73.1 GPa, only the bcc polymorph is observed. The systematically experimental investigation confirms the phase transition sequence of Sn as β-Sn→bct→bco→bco+bcc→bcc upon compression to 108.9 GPa at room temperature. [ABSTRACT FROM AUTHOR]

In this paper, small diameter InP nanowires with high crystal quality were synthesized through a chemical vapor deposition method. Benefitting from the high crystallinity and large specific surface area of InP nanowires, the simply constructed photodetector demonstrates a high responsivity of up to 1170 A·W−1 and an external quantum efficiency of 2.8×105% with a fast rise time of 110 ms and a fall time of 130 ms, even at low bias of 0.1 V. The effect of back-gate voltage on photoresponse of the device was systematically investigated, confirming that the photocurrent dominates over thermionic and tunneling currents in the whole operation. A mechanism based on energy band theory at the junction between metal and semiconductor was proposed to explain the back-gate voltage dependent performance of the photodetectors. These convincing results indicate that fine InP nanowires will have a brilliant future in smart optoelectronics. [ABSTRACT FROM AUTHOR]