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A two-dimensional binary driven disk system embedded by impermeable tilted plates is investigated through nonequilibrium computer simulations. It is well known that a binary disk system in which two particle species are driven in opposite directions exhibits jammed, phase separated, disordered, and laning states. The presence of tilted plates can not only advance the formation of laning phase, but also effectively stabilize laning phase by suppressing massively drifting behavior perpendicular to the driving force. The lane width distribution can be controlled easily by the interplate distance. The collective behavior of driven particles in laning phase is guided by the funnel-shaped confinements constituted by the neighboring tilted plates. Our results provide the important clues for investigating the mechanism of laning formation in driven system. [ABSTRACT FROM AUTHOR]

We studied the energetic behaviors of interstitial and substitution carbon (C)/nitrogen (N) impurities as well as their interactions with the vacancy in vanadium by first-principles simulations. Both C and N impurities prefer the octahedral site (O-site). N exhibits a lower formation energy than C. Due to the hybridization between vanadium-d and N/C-p, the N-p states are located at the energy from −6.00 eV to −5.00 eV, which is much deeper than that from −5.00 eV to –3.00 eV for the C-p states. Two impurities in bulk vanadium, C–C, C–N, and N–N can be paired up at the two neighboring O-sites along the 〈111〉 direction and the binding energies of the pairs are 0.227 eV, 0.162 eV, and 0.201 eV, respectively. Further, we find that both C and N do not prefer to stay at the vacancy center and its vicinity, but occupy the O-site off the vacancy in the interstitial lattice in vanadium. The possible physical mechanism is that C/N in the O-site tends to form a carbide/nitride-like structure with its neighboring vanadium atoms, leading to the formation of the strong C/N–vanadium bonding containing a covalent component. [ABSTRACT FROM AUTHOR]

First-principle calculations reveal that the configuration system of hexagonal boron nitride (h-BN) monolayer with triangular vacancy can induce obvious magnetism, contrary to that of the nonmagnetic pristine boron nitride monolayer. Interestingly, the h-BN with boron atom vacancy (VB-BN) displays metallic behavior with a total magnetic moment being 0.46μB per cell, while the h-BN with nitrogen atom vacancy (VN-BN) presents a half-metallic characteristic with a total magnetic moment being 1.0μB per cell. Remarkably, piezoelectric stress coefficient e11 of the VN-BN is about 1.5 times larger than that of pristine h-BN. Furthermore, piezoelectric strain coefficient d11 (12.42 pm/V) of the VN-BN is 20 times larger than that of pristine h-BN and also one order of magnitude larger than the value for the h-MoS2 monolayer, which is mainly due to the spin-down electronic state in the VN-BN system. Our study demonstrates that the nitrogen atom vacancies can be an efficient route to tailoring the magnetic and piezoelectric properties of h-BN monolayer, which have promising performances for potential applications in nano-electromechanical systems (NEMS) and nanoscale electronics devices. [ABSTRACT FROM AUTHOR]

The temperature-induced complex refractive index (CRI) effect of graphene is demonstrated theoretically and experimentally based on a graphene coated in-fiber MZI (Mach–Zehnder interferometer). The relationships between real and imaginary parts of the graphene CRI and temperature are obtained through investigating the dip wavelength and intensity of the MZI interference spectrum changing with temperature, respectively. The temperature effect of CRI of the graphene is also analyzed theoretically. Both experimental and theoretical studies show that the real part and imaginary part of the CRI nonlinearly decrease and increase with temperature increasing, respectively. This graphene-coated in-fiber MZI structure also possesses the advantages of easy fabrication, miniaturization, low cost and robustness. It has potential applications in nanomaterial-based optic devices for communication and sensing. [ABSTRACT FROM AUTHOR]

The low temperature phase transformation in the Cu2ZnSnS4 (CZTS) films was investigated by laser annealing and low temperature thermal annealing. The Raman measurements show that a-high-power laser annealing could cause a red shift of the Raman scattering peaks of the kesterite (KS) structure and promotes the formation of the partially disordered kesterite (PD-KS) structure in the CZTS films, and the low-temperature thermal annealing only shifts the Raman scattering peak of KS phase by several wavenumber to low frequency and the broads Raman peaks in the low frequency region. Moreover, the above two processes were reversible. The Raman analyses of the CZTS samples prepared under different process show that the PD–KS structure tends to be found at low temperatures and low sulfur vapor pressures. Our results reveal that the control of the phase structure in CZTS films is feasible by adjusting the preparation process of the films. [ABSTRACT FROM AUTHOR]

GaN-based yellow light-emitting diodes (LEDs) on Si substrates are aged at a direct current density of 50 A/cm2 for 500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm2. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given. [ABSTRACT FROM AUTHOR]

In the present paper, the concentration effect of near-infrared quantum cutting of Tm3+ ion in (Y1–xTmx)3Al5O12 powder phosphor is studied by means of experiments and calculations. In addition, the absorption spectra, visible-to-near-infrared excitation and emission spectra, and fluorescence lifetimes are measured. It is found that (Y1–xTmx)3Al5O12 powder phosphor has a strong four-photon near-infrared quantum cutting luminescence of 1788.0-nm 3F4 → 3H6 fluorescence of Tm3+ ion, when excited by 357.0-nm light. It is also found that the up-limit of the four-photon near-infrared quantum cutting luminescence efficiency of (Y0.700Tm0.300)3Al5O12 powder phosphor is approximately 302.19%. To the knowledge of the authors, this is the first time that a near-infrared quantum cutting efficiency up-limit exceeding 300% has been reported. The results of this manuscript are valuable in aiding the probing of the new generation Ge solar cell. [ABSTRACT FROM AUTHOR]