Search

The variations of single event transient (SET) pulse width of high-LET heavy ion irradiation in 16-nm-thick bulk silicon fin field-effect transistor (FinFET) inverter chains with different driven strengths are measured at different temperatures. Three-dimensional (3D) technology computer-aided design simulations are carried out to study the SET pulse width and saturation current varying with temperature. Experimental and simulation results indicate that the increase in temperature will enhance the parasitic bipolar effect of bulk FinFET technology, resulting in the increase of SET pulse width. On the other hand, the increase of inverter driven strength will change the layout topology, which has a complex influence on the SET temperature effects of FinFET inverter chains. The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

We show the structural and optical properties of non-polar a-plane GaN epitaxial films modified by Si ion implantation. Upon gradually raising Si fluences from 5 × 1013 cm−2 to 5 × 1015 cm−2, the n-type dopant concentration gradually increases from 4.6 × 1018 cm−2 to 4.5 × 1020 cm−2, while the generated vacancy density accordingly raises from 3.7 × 1013 cm−2 to 3.8 × 1015 cm−2. Moreover, despite that the implantation enhances structural disorder, the epitaxial structure of the implanted region is still well preserved which is confirmed by Rutherford backscattering channeling spectrometry measurements. The monotonical uniaxial lattice expansion along the a direction (out-of-plane direction) is observed as a function of fluences till 1 × 1015 cm−2, which ceases at the overdose of 5 × 1015 cm−2 due to the partial amorphization in the surface region. Upon raising irradiation dose, a yellow emission in the as-grown sample is gradually quenched, probably due to the irradiation-induced generation of non-radiative recombination centers.

The atomic structure and transition properties of H-like Al embedded in hot and dense plasmas are investigated using modified GRASP2K code. The plasma screening effect on the nucleus is described using the self-consistent field ion sphere model. The effective nuclear potential decreases much more quickly with increasing average free electron density, but increases slightly with increasing electron temperature. The variations of the transition energies, transition probabilities, and oscillator strengths with the free electron density and electron temperature are the same as that of the effective nuclear potential. The results reported in this work agree well with other available theoretical results and are useful for plasma diagnostics.