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The various advantages of extended-source (ES), broken gate (BG), and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-effect transistor (ESBG TFET) in order to enhance the direct-current and analog/radio-frequency performance. The source of the ESBG TFET is extended into channel for the purpose of increasing the point and line tunneling in the device at the tunneling junction, and then, the on-state current for the ESBG TFET increases. The influence of the source region length on the direct-current and radio-frequency performance parameters of the ESBG TFET is analyzed in detail. The results show that the proposed TFET exhibits a high on-state current to off-state current ratio of 1013, large transconductance of 1200 μS/μm, high cut-off frequency of 72.8 GHz, and high gain bandwidth product of 14.3 GHz. Apart from these parameters, the ESBG TFET also demonstrates high linearity distortion parameters in terms of the second- and third-order voltage intercept points, the third-order input interception point, and the third-order intermodulation distortion. Therefore, the ESBG TFET greatly promotes the application potential of conventional TFETs.

The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling technology. The line tunneling is created due to the fact that the gate electric field is aligned with the tunneling direction, which dramatically enhances tunneling area and tunneling current. Moreover, the effects of the structure parameters such as the length between top gate and source electrode, the length between top gate and drain electrode, the distance between bottom gate and drain electrode, and the metal position on the on-state current, electric field and energy band are investigated and optimized. In addition, analog/radio-frequency performance and linearity characteristics are studied. All results demonstrate that the proposed device not only enhances the on/of current ratio and reduces the subthreshold swing, but also offers eight times improvement in cut-off frequency and gain band product as compared with the conventional point tunneling dopingless TFET, at the same time; it shows better linearity and small distortions. This proposed device greatly enhances the potential of applications in dopingless TFET.

A tunnel field-effect transistor (TFET) is proposed by combining various advantages together, such as non-uniform gate–oxide layer, hetero-gate-dielectric (HGD), and dual-material control-gate (DMCG) technology. The effects of the length of non-uniform gate–oxide layer and dual-material control-gate on the on-state, off-state, and ambipolar currents are investigated. In addition, radio-frequency performance is studied in terms of gain bandwidth product, cut-off frequency, transit time, and transconductance frequency product. Moreover, the length of non-uniform gate–oxide layer and dual-material control-gate are optimized to improve the on-off current ratio and radio-frequency performances as well as the suppression of ambipolar current. All results demonstrate that the proposed device not only suppresses ambipolar current but also improves radio-frequency performance compared with the conventional DMCG TFET, which makes the proposed device a better application prospect in the advanced integrated circuits.

This paper reports that polarized far-infrared reflectivity measurements have been done on LiGaCO2 single crystal along two crystalline axes at different temperatures. The temperature dependent frequencies of the longitudinal and transverse optical phonon have been obtained from the real part of optical conductivity and the loss function respectively. A small Drude component is observed at frequency below 300 cm-1 which could arise from Li ions or oxygen deficiencies. The ionicity of LiGaCO2 has been studied from the analysis of the Born effective charge of different ions.

In this paper, two novel schemes for deterministic joint remote state preparation (JRSP) of arbitrary single- and two-qubit states are proposed. A set of ingenious four-particle partially entangled states are constructed to serve as the quantum channels. In our schemes, two senders and one receiver are involved. Participants collaborate with each other and perform projective measurements on their own particles under an elaborate measurement basis. Based on their measurement results, the receiver can reestablish the target state by means of appropriate local unitary operations deterministically. Unit success probability can be achieved independent of the channel's entanglement degree.