1. Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor*
- Author
-
Chong Yang, Weihua Han, Jun-Dong Chen, Yang-Yan Guo, Xiao-Di Zhang, Wen Liu, Fuhua Yang, and Xiao-Song Zhao
- Subjects
Materials science ,Dopant ,Silicon ,business.industry ,Transistor ,General Physics and Astronomy ,chemistry.chemical_element ,Biasing ,Junctionless nanowire transistor ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,law.invention ,chemistry ,law ,Quantum dot ,0103 physical sciences ,Atom ,Optoelectronics ,010306 general physics ,0210 nano-technology ,business ,Quantum tunnelling - Abstract
We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature.
- Published
- 2019