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Start Over Author "Fang Xu" Topic doping agents (chemistry) Journal chinese physics b
1 results on '"Fang Xu"'

1. High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature.

Author

Wei Huang, Chao Lu, Jue Yu, Jiang-Bin Wei, Chao-Wen Chen, Jian-Yuan Wang, Jian-Fang Xu, Chen Wang, Cheng Li, Song-Yan Chen, Chun-Li Liu, and Hong-Kai Lai

Subjects
GERMANIUM, NICKEL, DOPING agents (Chemistry), PHOSPHORUS, LOW temperatures
Abstract

High-performance Ge n+/p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n+/p junction has a rectification ratio of 5.6× 104 and a forward current of 387 A/cm2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. [ABSTRACT FROM AUTHOR]

Published
2016
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