1. Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy.
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HETEROSTRUCTURES , *SEMICONDUCTOR design , *CRYSTAL structure , *MOLECULAR beam epitaxy , *PHOTOELECTRICITY , *ELECTROMAGNETIC current density measurement , *CURRENT-voltage characteristics , *ZINC oxide - Abstract
The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0:15 V < V < 0:6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages (V > 0:6 V), the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2, respectively. [ABSTRACT FROM AUTHOR]
- Published
- 2012
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