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The conservation law for first-order coherence and mutual correlation of a bipartite qubit state was firstly proposed by Svozilík et al., and their theories laid the foundation for the study of coherence migration under unitary transformations. In this paper, we generalize the framework of first-order coherence and mutual correlation to an arbitrary (m ⊗ n)-dimensional bipartite composite state by introducing an extended Bloch decomposition form of the state. We also generalize two kinds of unitary operators in high-dimensional systems, which can bring about coherence migration and help to obtain the maximum or minimum first-order coherence. Meanwhile, the coherence migration in open quantum systems is investigated. We take depolarizing channels as examples and establish that the reduced first-order coherence of the principal system over time is completely transformed into mutual correlation of the (2 ⊗ 4)-dimensional system-environment bipartite composite state. It is expected that our results may provide a valuable idea or method for controlling the quantum resource such as coherence and quantum correlations.

Using a dusty plasma ratchet, one can realize the rectification of charged dust particle in a plasma. To obtain the ratchet potential dominating the rectification, here we perform quantitative simulations based on a two-dimensional fluid model of capacitively coupled plasma. Plasma parameters are firstly calculated in two typical cross sections of the dusty plasma ratchet which cut vertically the saw channel at different azimuthal positions. The balance positions of charged dust particle in the two cross sections then can be found exactly. The electric potentials at the two balance positions have different values. Using interpolation in term of a double-sine function from previous experimental measurement, an asymmetrical ratchet potential along the saw channel is finally obtained. The asymmetrical orientation of the ratchet potential depends on discharge conditions. Quantitative simulations further reproduce our previous experimental phenomena such as the rectification of dust particle in the dusty plasma ratchet.

Vanadium oxide films were grown by atomic layer deposition using the tetrakis[ethylmethylamino] vanadium as the vanadium precursor and H2O as the oxide source. The effect of the source temperature on the quality of vanadium oxide films and valence state was investigated. The crystallinity, surface morphology, film thickness, and photoelectric properties of the films were characterized by x-ray diffraction, atomic force microscope, scanning electron microscope, I–V characteristics curves, and UV–visible spectrophotometer. By varying the source temperature, the content of V6O11, VO2, and V6O13 in the vanadium oxide film increased, that is, as the temperature increased, the average oxidation state generally decreased to a lower value, which is attributed to the rising of the vapor pressure and the change of the ionization degree for organometallics. Meanwhile, the root-mean-square roughness decreased and the metal–insulator transition temperature reduced. Our study is great significance for the fabrication of vanadium oxide films by atomic layer deposition.

This paper presents the development of lateral depletion-mode n-channel 4H-SiC junction field-effect transistors (LJFETs) using double-mesa process toward high-temperature integrated circuit (IC) applications. At room temperature, the fabricated LJFETs show a drain-to-source saturation current of 23.03 μA/μm, which corresponds to a current density of 7678 A/cm2. The gate-to-source parasitic resistance of 17.56 kΩ ⋅ μm is reduced to contribute only 13.49% of the on-resistance of 130.15 kΩ ⋅ μm, which helps to improve the transconductance up to 8.61 μS/μm. High temperature characteristics of LJFETs were performed from room temperature to 400 °C. At temperatures up to 400 °C in air, it is observed that the fabricated LJFETs still show normally-on operating characteristics. The drain-to-source saturation current, transconductance and intrinsic gain at 400 °C are 7.47 μA/μm, 2.35 μS/μm and 41.35, respectively. These results show significant improvement over state-of-the-art and make them attractive for high-temperature IC applications.

The optimization of high power terahertz monolithic integrated circuit (TMIC) is systemically studied based on the physical model of the Schottky barrier varactor (SBV) with interface defects and tunneling effect. An ultra-thin dielectric layer is added to describe the extra tunneling effect and the damping of thermionic emission current induced by the interface defects. Power consumption of the dielectric layer results in the decrease of capacitance modulation ration (C max/C min), and thus leads to poor nonlinear C–V characteristics. The proposed Schottky metal-brim (SMB) terminal structure could improve the capacitance modulation ration by reducing the influence of the interface charge and eliminating the fringing capacitance effect. Finally, a 215 GHz tripler TMIC is fabricated based on the SMB terminal structure. The output power is above 5 mW at 210–218 GHz and the maximum could exceed 10 mW at 216 GHz, which could be widely used in terahertz imaging, radiometers, and so on. This paper also provides theoretical support for the SMB structure to optimize the TMIC performance.

The effects of buried oxide (BOX) layer on the capacitance of SiGe heterojunction photo-transistor (HPT), including the collector–substrate capacitance, the base–collector capacitance, and the base–emitter capacitance, are studied by using a silicon-on-insulator (SOI) substrate as compared with the devices on native Si substrates. By introducing the BOX layer into Si-based SiGe HPT, the maximum photo-characteristic frequency f t,opt of SOI-based SiGe HPT reaches up to 24.51 GHz, which is 1.5 times higher than the value obtained from Si-based SiGe HPT. In addition, the maximum optical cut-off frequency f β,opt, namely its 3-dB bandwidth, reaches up to 1.13 GHz, improved by 1.18 times. However, with the increase of optical power or collector current, this improvement on the frequency characteristic from BOX layer becomes less dominant as confirmed by reducing the 3-dB bandwidth of SOI-based SiGe HPT which approaches to the 3-dB bandwidth of Si-based SiGe HPT at higher injection conditions.

The effects of cyclic stress loading on the microstructual evolution and tensile properties of a medium-carbon super-bainitic steel were investigated. Experimental results show that the cyclic stress can induce the carbon gathering in austenite and phase transformation from film-like retained austenite to twin martensite, which will obviously enhance the tensile strength and the product of tensile strength and ductility. The higher the bainitic transformation temperature, the lower the transformation rate of the retained austenite. The amount and thickness of the film-like retained austenite play an important role during the cyclic stress induced phase transformation.

It has been widely accepted that silicene is a topological insulator, and its gap closes first and then opens again with increasing electric field, which indicates a topological phase transition from the quantum spin Hall state to the band insulator state. However, due to the relatively large atomic spacing of silicene, which reduces the bandwidth, the electron-electron interaction in this system is considerably strong and cannot be ignored. The Hubbard interaction, intrinsic spin orbital coupling (SOC), and electric field are taken into consideration in our tight-binding model, with which the phase diagram of silicene is carefully investigated on the mean field level. We have found that when the magnitudes of the two mass terms produced by the Hubbard interaction and electric potential are close to each other, the intrinsic SOC flips the sign of the mass term at either K or K' for one spin and leads to the emergence of the spin-polarized quantum anomalous Hall state.

While ptychography is an algorithm based on coherent illumination, satisfactory reconstructions can still be generated in most experiments, even though the radiation sources that are used are not ideally coherent. The underlying physics of this phenomenon is that the diffraction patterns of partially coherent illumination can be treated as those of purely coherent illumination by altering the intensities of the diffracted beams relative to their real values. On the other hand, due to the inconsistency in the altering interference among all the diffraction beams, noise/distortion is always involved in the reconstructed images. Furthermore, for a weak object, the noise/distortion in the reconstruction can be mostly reduced by using a highly curved beam for illumination in the data recording and forcing the dark field diffraction to be zero in the reconstruction.

Based on classical density functional theory, an expression of the pressure tensor for inhomogeneous fluids is presented. This takes into account greater correlation between particles, especially for systems that are geometrically confined or involve an interface. The density and pressure components of Lennard-Jones fluids confined in hard and softened nano-cavities are calculated. A comparison between the results of this work and IK expression suggests that the agreement depends on temperature. The interfacial tension for hard sphere fluids agrees well with the Monte Carlo result when the bulk density is not too large. The results of the solid-fluid interfacial tension for Lennard—Jones fluids demonstrate that different types of external potentials modulate the interfacial tension in different manners.