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Here we report the 1.3-μm electrical injection lasers based on the InAs/GaAs quantum dot (QD) grown on GaAs substrate, which can steadily work at 110℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow growth mode of solid source molecular beam epitaxy. The density of InAs quantum dots in the active region is increased from 3.8×1010 cm -2 to 5.9×1010 cm -2. For lasers performance, the maximum output power of devices with low density quantum dots as active region is 650mW at room temperature, and that of devices with high density is 1030mW. Meanwhile the output power of high density device is 131 mW under the injection current of 4 A at 110℃.

The line width (often synonymously used for critical dimension, CD) is a crucial parameter in integrated circuits. To accurately control CD values in manufacturing, a reasonable CD reference material is required to calibrate the corresponding instruments. We develop a new reference material with nominal CDs of 160 nm, 80 nm, and 40 nm. The line features are investigated based on the metrological scanning electron microscope which is developed by the National Institute of Metrology (NIM) in China. Also, we propose a new characterization method for the precise measurement of CD values. After filtering and leveling the intensity profiles, the line features are characterized by the combination model of the Gaussian and Lorentz functions. The left and right edges of CD are automatically extracted with the profile decomposition and k-means algorithm. Then the width of the two edges at the half intensity position is regarded as the standard CD value. Finally, the measurement results are evaluated in terms of the sample, instrument, algorithm, and repeatability. The experiments indicate efficiency of the proposed method which can be easily applied in practice to accurately characterize CDs.

With the emergence and rapid development of nanotechnology, the nanoparticles hybridized with multicomponent lipids are more and more used in gene delivery. These vectors interact with the cell membrane before entering into the cell. Therefore, the nature of this interaction is important in investigating multicomponent liposome-nanoparticle (MLP) transport across the cell membrane. In this paper the transport of MLPs across the membranes of giant vesicles (GVs) in solvents is studied by using the self-consistent field theory (SCFT). Based on the analysis of the MLP permeating the GV membranes, a simple transport model is proposed. The effects of the difference in membrane morphology and the size of the nanoparticle on the endocytosis are discussed systematically. The role of energy barriers in quasi-equilibrium is also examined. The results indicate that the interaction between MLP and GV is a spontaneous process and the energy barrier needs overcoming to form metastable intermediates. The results provide theoretical reference for better understanding the transmembrane transport process of nanoparticles, and guidance for relevant experimental studies as well.

We study the Bose–Einstein condensation of parallel light in a two-dimensional nonlinear optical cavity, where the massive photons are converted into photon molecules (p-molecules). We extend the classical-field method to provide a description of the two-component system, and we also derive a coupled density equation which can be used to describe the conversion relation between photons and p-molecules. Furthermore, we obtain the chemical potential of the system, and we also find that the system can transform from the mixed photon and p-molecule condensate phase into a pure p-molecule condensate phase. Additionally, we investigate the collective excitation of the system. We also discuss the problem how the spontaneous decay of an atom is influenced by both the phase transition and collective excitation of the coupling system.

We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-μm wavelength. The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-μm-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T 0 is estimated at above 60 K.

Understanding the evolution of irradiation-induced defects is of critical importance for the performance estimation of nuclear materials under irradiation. Hereby, we systematically investigate the influence of He on the evolution of Frenkel pairs and collision cascades in tungsten (W) via using the object kinetic Monte Carlo (OKMC) method. Our findings suggest that the presence of He has significant effect on the evolution of irradiation-induced defects. On the one hand, the presence of He can facilitate the recombination of vacancies and self-interstitial atoms (SIAs) in W. This can be attributed to the formation of immobile He-SIA complexes, which increases the annihilation probability of vacancies and SIAs. On the other hand, due to the high stability and low mobility of He-vacancy complexes, the growth of large vacancy clusters in W is kinetically suppressed by He addition. Specially, in comparison with the injection of collision cascades and He in sequential way at 1223 K, the average sizes of surviving vacancy clusters in W via simultaneous way are smaller, which is in good agreement with previous experimental observations. These results advocate that the impurity with low concentration has significant effect on the evolution of irradiation-induced defects in materials, and contributes to our understanding of W performance under irradiation.

We investigate a graphene-coated nanowire waveguide (GCNW) composed of two suspended wedge porous silicon nanowires and a thin Ag partition. The plasmonic characteristics of the proposed structure in terahertz (THz) frequency band are simulated by the finite element method (FEM). The parameters including the gap between the nanowires and Ag partition, the height of the nanowire, the thickness of the Ag partition, and the Fermi level of graphene, are optimized. The simulation results show that a normalized mode field area of ∼ 10−4 and a figure of merit of ∼ 100 can be achieved. Compared with the cylindrical GCNW and isolated GCNW, the proposed wedge GCNW has good electric field enhancement. A waveguide sensitivity of 32.28 is obtained, which indicates the prospects of application in refractive index (RI) sensing in THz frequency band. Due to the adjustable plasmonic characteristics by changing the Fermi level (E F), the proposed structure has promising applications in the electro-optic modulations, optical interconnects, and optical switches.

The novel coronavirus pneumonia triggered by COVID-19 is now raging the whole world. As a rapid and reliable killing COVID-19 method in industry, electron beam irradiation can interact with virus molecules and destroy their activity. With the unexpected appearance and quickly spreading of the virus, it is urgently necessary to figure out the mechanism of electron beam irradiation on COVID-19. In this study, we establish a virus structure and molecule model based on the detected gene sequence of Wuhan patient, and calculate irradiated electron interaction with virus atoms via a Monte Carlo simulation that track each elastic and inelastic collision of all electrons. The characteristics of irradiation damage on COVID-19, atoms’ ionizations and electron energy losses are calculated and analyzed with regions. We simulate the different situations of incident electron energy for evaluating the influence of incident energy on virus damage. It is found that under the major protecting of an envelope protein layer, the inner RNA suffers the minimal damage. The damage for a ∼100-nm-diameter virus molecule is not always enhanced by irradiation energy monotonicity, for COVID-19, the irradiation electron energy of the strongest energy loss damage is 2 keV.

The design of the active region structures, including the modifications of structures of the quantum barrier (QB) and electron blocking layer (EBL), in the deep ultraviolet (DUV) AlGaN laser diode (LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion, and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content AlGaN EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.

In this work, a dual-polarized lens antenna system based on isotropic metasurfaces is proposed for 12 GHz applications. The metasurface lens is composed of 0.24 wavelength unit cells with metallic strips etched on top and bottom sides of the unit cell, and a cross-slots metallic layer in the middle as the ground. The multimode resonances in the unit cell can realize a large phase shift (covering $0^{\circ} \sim 360^{\circ})$ and the maximum transmission efficiency above 80%. The feed antenna at the focal point of the lens is a broadband dual-polarized microstrip antenna. The simulated results demonstrate that the dual-polarized lens antenna system can realize the input ports isolation of more than 25 dB, and the gain of more than 16 dB.

We introduce a two-dimensional Bose–Einstein condensation model consisting of massive photon and photon-pair. Based on the new nonlinear model, the traditional process of second harmonics generation is reinvestigated. In order to describe the process, a new quantum phase, the harmonic phase, is introduced. The order parameter of the new physical phase is also given in this paper.

Three samples of GaAs/AlAs multiple-quantum wells with different quantum well widths and δ-doped with Be acceptors at the well center were grown on (100) GaAs substrates by molecular beam epitaxy. Polarized Raman spectra were recorded on the three samples at temperatures in a range of 4–50 K in a backscattering configuration. The two branches of coupled modes due to the interaction of the hole intersubband transitions and the quantum-well longitudinal optical (LO) phonon were observed clearly. The evaluation formalism of the Green function was employed and each lineshape of the Raman spectrum of the coupled modes was simulated. The dependence of the peak position of Raman shifts of the two coupled modes as well as the quantum-well LO phonon on the quantum-well size and measured temperature were given, and the coupling interaction mechanism between the hole subband transitions and the quantum-well LO phonon was researched.

In this letter, the Ta/HfO x /BN/TiN resistive switching devices are fabricated and they exhibit low power consumption and high uniformity each. The reset current is reduced for the HfO x /BN bilayer device compared with that for the Ta/HfO x /TiN structure. Furthermore, the reset current decreases with increasing BN thickness. The HfO x layer is a dominating switching layer, while the low-permittivity and high-resistivity BN layer acts as a barrier of electrons injection into TiN electrode. The current conduction mechanism of low resistance state in the HfO x /BN bilayer device is space-charge-limited current (SCLC), while it is Ohmic conduction in the HfO x device.

Undoped p-type GaSb single crystals were annealed at 550–600 °C for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.

A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two- and three-dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy- and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.

In this study, using a comprehensive numerical simulation of charge and discharge processes, we investigate the formation and evolution of negative charge and discharge characteristics of a grounded PMMA film irradiated by a nonfocused electron beam. Electron scattering and transport processes in the sample are simulated with the Monte Carlo and the finite-different time-domain(FDTD) methods, respectively. The properties of charge and discharge processes are presented by the evolution of internal currents, charge quantity, surface potential, and discharge time. Internal charge accumulation in the sample may reach saturation by primary electron(PE) irradiation providing the charge duration is enough. Internal free electrons will run off to the ground in the form of leakage current due to charge diffusion and drift during the discharge process after irradiation, while trapped electrons remain. The negative surface potential determined by the charging quantity decreases to its saturation in the charge process, and then increases in the discharge process. A larger thickness of the PMMA film will result in greater charge amount and surface potential in charge saturation and in final discharge state, while the electron mobility of the material has little effects on the final discharge state. Moreover,discharge time is less for smaller thickness or larger electron mobility. The presented results can be helpful for estimating and weakening the charging of insulating samples especially under the intermittent electron beam irradiation in related surface analysis or measurement.

A new FePt nanostructure with stripe-like patterns has been prepared by direct current (DC) magnetron sputtering on anodic aluminum oxide (AAO) templates. AAO templates anodized under low voltages (7 V) demonstrate self-organized, maze-like patterns, different from the conventional porous structures obtained at high voltages. FePt thin films deposited on such templates tend to replicate the morphology of the templates. Although there is no obvious spatial ordering, the dimensions of the FePt nano-stripes are highly uniform, due to the constrained growth along the transverse direction of the AAO pattern. The magnetic properties are strongly influenced by this unique morphology. While continuous films demonstrate strong exchange coupling, the dominant interaction in FePt nano-stripes with the same nominal thickness is magnetostatic. The morphology also dictates the magnetization reversal behaviors, with thin films dominated by domain nucleation; while nano-stripes incline to reverse their magnetization by spin rotation. Our work demonstrates that self-organized AAO templates can be used to control the morphology and magnetic behavior of FePt materials.

We investigate the resistive switching characteristics of a Cu/VOx/W structure. The VOx film is deposited by radio-frequency magnetron sputtering on the Cu electrode as a dielectric layer. The prepared VOx sample structure shows reproducible bipolar resistive switching characteristics with ultra-low switching voltage and good cycling endurance. A modified physical model is proposed to elucidate the typical switching behavior of the vanadium oxide-based resistive switching memory with a sudden resistance transition, and the self-saturation of reset current as a function of compliance current is observed in the test, which is attributed to the growth pattern of the conducting filaments. Additionally, the related conducting mechanism is discussed in detail.

We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell. The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer (Agilent B1500A), and the relative micro-analysis of I—V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope (CAFM). The I—V test results indicate that both the forming and the reversible resistive switching between low resistance state (LRS) and high resistance state (HRS) can be observed under either positive or negative sweep. The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage. The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.

We present a novel numerical model and simulate preliminarily the charging process of a polymer subjected to electron irradiation of several 10 keV. The model includes the simultaneous processes of electron scattering and ambipolar transport and the influence of a self-consistent electric field on the scattering distribution of electrons. The dynamic spatial distribution of charges is obtained and validated by existing experimental data. Our simulations show that excess negative charges are concentrated near the edge of the electron range. However, the formed region of high charge density may extend to the surface and bottom of a kapton sample, due to the effects of the electric field on electron scattering and charge transport, respectively. Charge trapping is then demonstrated to significantly influence the charge motion. The charge distribution can be extended to the bottom as the trap density decreases. Charge accumulation is therefore balanced by the appearance and increase of leakage current. Accordingly, our model and numerical simulation provide a comprehensive insight into the charging dynamics of a polymer irradiated by electrons in the complex space environment.

The influence of laser beam size on laser-induced damage performance, especially damage probability and the laser-induced damage threshold (LIDT), is investigated. It is found that damage probability is dependent on beam size when various damage precursors with different potential behaviors are involved. This causes the damage probability and the LIDT to be different between cases under a large-aperture beam and a small-aperture beam. Moreover, the fluence fluctuation of the large-aperture laser beam brings out hot spots, which move randomly across the beam from shot to shot. Thus this leads the most probable maximum fluence after many shots at any location on the optical component to be several times the average beam fluence. These two effects result in the difference in the damage performance of the optical component between the cases under a large-aperture and small-aperture laser.