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Understanding the evolution of irradiation-induced defects is of critical importance for the performance estimation of nuclear materials under irradiation. Hereby, we systematically investigate the influence of He on the evolution of Frenkel pairs and collision cascades in tungsten (W) via using the object kinetic Monte Carlo (OKMC) method. Our findings suggest that the presence of He has significant effect on the evolution of irradiation-induced defects. On the one hand, the presence of He can facilitate the recombination of vacancies and self-interstitial atoms (SIAs) in W. This can be attributed to the formation of immobile He-SIA complexes, which increases the annihilation probability of vacancies and SIAs. On the other hand, due to the high stability and low mobility of He-vacancy complexes, the growth of large vacancy clusters in W is kinetically suppressed by He addition. Specially, in comparison with the injection of collision cascades and He in sequential way at 1223 K, the average sizes of surviving vacancy clusters in W via simultaneous way are smaller, which is in good agreement with previous experimental observations. These results advocate that the impurity with low concentration has significant effect on the evolution of irradiation-induced defects in materials, and contributes to our understanding of W performance under irradiation.

The effects of helium (He) on the sliding and mechanical properties of a vanadium (V)Σ5(310)/[001] grain boundary (GB) have been investigated using a first-principles method. It has been found that He was energetically favorable sitting at the GB region with a segregation energy of −0.27 eV, which was attributed to the special atomic configurations and charge density distributions of the GB. The maximal sliding energy barrier of the He-doped GB was calculated to be 1.73 J/m2, ~ 35% larger than that of the clean GB. This suggested that the presence of He would hinder the V GB mobility. Based on the thermodynamic criterion, the total energy calculations indicated that the embrittlement of V GB would be enhanced by He segregation.

We propose a vacancy trapping mechanism for carbon—vacancy (C—V) complex formation in copper (Cu) according to the first-principles calculations of the energetics and kinetics of C—V interaction. Vacancy reduces charge density in its vicinity to induce C nucleation. A monovacancy is capable of trapping as many as four C atoms to form CnV (n = 1, 2, 3, 4) complexes. A single C atom prefers to interact with neighboring Cu at a vacancy with a trapping energy of −0.21 eV With multiple C atoms added, they are preferred to bind with each other to form covalent-like bonds despite of the metallic Cu environment. For the CnV complexes, C2V is the major one due to its lowest average trapping energy (1.31 eV). Kinetically the formation of the CnV complexes can be ascribed to the vacancy mechanism due to the lower activation energy barrier and the larger diffusion coefficient of vacancy than those of the interstitial C.