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Finesse is a critical parameter for describing the characteristics of an optical enhancement cavity (OEC). The paper first presents a review of finesse measurement techniques, including a comparative analysis of the advantages, disadvantages, and potential limitations of several main methods from both theoretical and practical perspectives. A variant of the existing method called the free spectral range (FSR) modulation method is proposed and compared with three other finesse measurement methods: the fast-switching cavity ring-down (CRD) method, the rapidly swept-frequency (SF) CRD method, and the ringing effect method. A high-power OEC platform with a high finesse of approximately 16,000 is built and measured with the four methods. The performance of these methods is compared, and the results show that the FSR modulation method and the fast-switching CRD method are more suitable and accurate than the other two methods for high-finesse OEC measurements. The CRD method and the ringing effect method can be implemented in open loop using simple equipment and are easy to perform. Additionally, recommendations for selecting finesse measurement methods under different conditions are proposed, which benefit the development of OEC and its applications.

Seizures are caused by increased neuronal firing activity resulting from reduced inhibitory effect and enhancement of inhibitory modulation to suppress this activity is used as a therapeutic tool. However, recent experiments have shown a counterintuitive phenomenon that inhibitory modulation does not suppress but elicit post-inhibitory rebound (PIR) spike along with seizure to challenge the therapeutic tool. The nonlinear mechanism to avoid the PIR spike can present theoretical guidance to seizure treatment. This paper focuses on identifying credible bifurcations that underlie PIR spike by modulating multiple parameters in multiple theoretical models. The study identifies a codimension-2 bifurcation called Saddle-Node Homoclinic Orbit (SNHOB), which is an intersection between saddle node bifurcation on invariant cycle (SNIC) and other two bifurcations. PIR spike cannot be evoked for the SNIC far from the SNHOB but induced for the SNIC close to the SNHOB, which extends the bifurcation condition for PIR spike from the well-known Hopf to SNIC. Especially, in a thalamic neuron model, increases of conductance of T-type Ca2+ (TCa) channel induce SNIC bifurcation approaching to the SNHOB to elicit PIR spikes, closely matching experimental results of the absence seizure or Parkinson diseases. Such results imply that, when inhibition is employed to relieve absence seizure and Parkinson diseases related to PIR spike, modulating SNIC to get far from the SNHOB to avoid PIR spike is the principle. The study also addresses the complex roles of TCa current and comprehensive relationships between PIR spike and nonlinear conceptions such as bifurcation types and shapes of threshold curve.

The intrinsic chirp of high-order harmonic generation is an important factor limiting the production of ultrashort attosecond pulses. Based on numerically solving the time-dependent Schrödinger equation, the generation process of high-order harmonic from the He atom under the action of orthogonal two-color combined pulse of fundamental frequency and higher intensity second harmonic fields is studied. In this paper, we propose to achieve quasi-chirp-free isolated attosecond pulses by superimposing a higher second-harmonic field on the orthogonal direction of the fundamental frequency field. It is found that the high-energy part of its harmonic emission exhibits small chirp characteristics, which can be used to synthesize isolated attosecond pulses. Through the analysis of the wave packets evolution and the classical motion trajectories of the electron, it is demonstrated that the quasi-chirp-free harmonic can be attributed to the simultaneous return of electrons ionized at different times to the parent particle. The influence of the relative phase of the two pulses on the harmonics is further analyzed, and it is observed that this phenomenon is sensitive to the relative phase, but it can still generate isolated attosecond pulses within a certain phase.

When a high energy nanosecond (ns) laser induces breakdown in the air, the plasma density generated in the rarefied atmosphere is much smaller than that at normal pressure. It is associated with a relatively lower absorption coefficient and reduces energy loss of the laser beam at low pressure. In this paper, the general transmission characterizations of a joule level 10 ns 1064 nm focused laser beam are investigated both theoretically and experimentally under different pressures. The evolution of the electron density (n e ), the changes in electron temperature (T e ) and the variation of laser intensity (I) are employed for numerical analyses in the simulation model. For experiments, four optical image transfer systems with focal length (f) of 200 mm are placed in a chamber and employed to focus the laser beam and produce plasmas at the focus. The results suggest that the transmittance increases obviously with the decreasing pressure and the plasma channels on the transmission path can be observed by its self-illumination. The simulation results agree well with the experimental data. The numerical model presents that the maximum n e at the focus can reach 1019 /cm3, which is far below the critical density (n c ). As a result, the laser beam is not completely shielded by the plasmas.

Thermal rectification refers to the phenomenon by which the magnitude of the heat flux in one direction is much larger than that in the opposite direction. In this study, we propose to implement the thermal rectification phenomenon in an asymmetric solid–liquid–solid sandwiched system with a nano-structured interface. By using the non-equilibrium molecular dynamics simulations, the thermal transport through the solid–liquid–solid system is examined, and the thermal rectification phenomenon can be observed. It is revealed that the thermal rectification effect can be attributed to the significant difference in the interfacial thermal resistance between Cassie and Wenzel states when reversing the temperature bias. In addition, effects of the liquid density, solid–liquid bonding strength and nanostructure size on the thermal rectification are examined. The findings may provide a new way for designs of certain thermal devices.

In view of the inherent poor tribological properties of copper, the reinforcement of copper matrix composites with WC particles presents a promising research area with significant industrial influence. Therefore, in the present study, a molecular dynamics approach is used to simulate the process of repeated friction of diamond grinding balls on WC/Cu composites, and the friction force, friction coefficient, abrasion depth, wear rate, abrasion morphology, von-Mises stress, internal defects, workpiece energy, and performance comparison of different layer thicknesses are systematically investigated in the multiple friction process. It is found that the fluctuation amplitude of friction force, friction coefficient, and abrasion depth are smaller and the fluctuation frequency is larger during the initial friction, whereas near the WC phase, there appears extreme values of the above parameters and the von-Mises stress is highly concentrated while the workpiece energy contonues to increase. In the case of the repeated friction, with the increase of friction times, the friction force, friction coefficient, and abrasion depth fluctuation amplitude increase, the fluctuation frequency decreases, the workpiece energy reaches an extreme value near the WC phase, and a large number of dislocations plug, therefore, the region is strengthened. As the distance between the grinding ball and the WC phase decreases, the more obvious the strengthening effect, the stronger the ability of workpiece to resist the wear will be.

Lateral type n-channel 4H-SiC metal--oxide--semiconductor field effect transistors (MOSFETs), fabricated using a current industrial process, are irradiated with gamma rays at different irradiation doses in this paper to carry out a profound study on the generation mechanism of radiation-induced interface traps and oxide trapped charges. Electrical parameters (e.g., threshold voltage, subthreshold swing and channel mobility) of the device before and after irradiation are investigated, and the influence of the channel orientation ( [ 1 1 ¯ 00 ] and [ 11 2 ¯ 0 ] ) on the radiation effect is discussed for the first time. A positive threshold voltage shift is observed at very low irradiation doses (< 100 krad (Si)); the threshold voltage then shifts negatively as the dose increases. It is found that the dependence of interface trap generation on the radiation dose is not the same for doses below and above 100 krad. For irradiation doses < 100 krad, the radiation-induced interface traps with relatively high generation speeds dominate the competition with radiation-induced oxide trapped charges, contributing to the positive threshold voltage shift correspondingly. All these results provide additional insight into the radiation-induced charge trapping mechanism in the SiO2/SiC interface.

Gate-grounded n-channel metal–oxide–semiconductor (GGNMOS) devices have been widely implemented as power clamps to protect semiconductor devices from electrostatic discharge stress owing to their simple construction, easy triggering, and low power dissipation. We present a novel I–V characterization of the GGNMOS used as the power clamp in complementary metal–oxide–semiconductor circuits as a result of switching the ESD paths under different impact energies. This special effect could cause an unexpected latch-up or pre-failure phenomenon in some applications with relatively large capacitances from power supply to power ground, and thus should be urgently analyzed and resolved. Transmission-line-pulse, human-body-modal, and light-emission tests were performed to explore the root cause.

We investigate a strain compensation method for the growth of complex interband cascade laser structures. For thick InAs/AlSb superlattice clad layers, the sublayer thicknesses were adjusted so that the tensile strain energy in the InAs sublayer was equal to the compressive strain energy in the AlSb sublayer. For the four-constituent active region, as the compressive strain in the Ga0.65In0.35Sb alloy layer was large, a tensile strain was incorporated in the chirped InAs/AlSb superlattice region for strain compensation to the Ga0.65In0.35Sb alloy. A laser structure of thickness 6 μm was grown on the GaSb substrate by molecular beam epitaxy. The wafer exhibited good surface morphology and high crystalline quality.

The effects of C ion irradiation on multilayer ReSe2 flakes are studied by utilizing different kinds of technologies. The domain sizes, thickness, morphologies of the multilayer ReSe2 flakes on the Al2O3 substrates before and after 1.0-MeV C ion irradiation with different fluence rates are studied by atomic force microscope and scanning electron microscopy. The atomic vibrational spectra of multilayer ReSe2 flakes are detected by micro-Raman spectra. The redshifts of the Raman modes after 1.0-MeV C ion irradiation are observed from the micro-Raman spectra. The elemental compositions and bonding configurations of the multilayer ReSe2 samples before and after irradiation processes are characterized by x-ray photoelectron spectroscopy. The structural properties are also investigated by x-ray diffraction, and it is concluded that after 1.0-MeV C ion irradiation process, multilayer ReSe2 samples continue to grow on Al2O3 substrates, the increase of crystallite size also reveals that the crystallinity is improved with the increase of the layer number after 1.0-MeV C ion irradiation.

We investigate the effect of ozone (O3) oxidation of silicon carbide (SiC) on the flat-band voltage (V fb) stability of SiC metal–oxide–semiconductor (MOS) capacitors. The SiC MOS capacitors are produced by O3 oxidation, and their V fb stability under frequency variation, temperature variation, and bias temperature stress are evaluated. Secondary ion mass spectroscopy (SIMS), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) indicate that O3 oxidation can adjust the element distribution near SiC/SiO2 interface, improve SiC/SiO2 interface morphology, and inhibit the formation of near-interface defects, respectively. In addition, we elaborate the underlying mechanism through which O3 oxidation improves the V fb stability of SiC MOS capacitors by using the measurement results and O3 oxidation kinetics.

RNAs play crucial and versatile roles in cellular biochemical reactions. Since experimental approaches of determining their three-dimensional (3D) structures are costly and less efficient, it is greatly advantageous to develop computational methods to predict RNA 3D structures. For these methods, designing a model or scoring function for structure quality assessment is an essential step but this step poses challenges. In this study, we designed and trained a deep learning model to tackle this problem. The model was based on a graph convolutional network (GCN) and named RNAGCN. The model provided a natural way of representing RNA structures, avoided complex algorithms to preserve atomic rotational equivalence, and was capable of extracting features automatically out of structural patterns. Testing results on two datasets convincingly demonstrated that RNAGCN performs similarly to or better than four leading scoring functions. Our approach provides an alternative way of RNA tertiary structure assessment and may facilitate RNA structure predictions. RNAGCN can be downloaded from https://gitee.com/dcw-RNAGCN/rnagcn.

We investigated the ionization of an atom with different orbital angular momenta in a high-frequency laser field by solving the time-dependent Schrödinger equation. The results showed that the ionization stabilization features changed with the relative direction between the angular momentum of the initial state and the vector field of the laser pulse. The ionization mechanism of the atom irradiated by a high frequency was explained by calculating the transition matrix and evolution of the time-dependent wave packet. This study can provide comprehensive understanding to improve atomic nonadiabatic ionization.

Interfacial energy anisotropy plays an important role in tilted growth of eutectics. However, previous studies mainly focused on the solid–solid interface energy anisotropy, and whether the solid–liquid interface energy anisotropy can significantly affect the tilted growth of eutectics still remains unclear. In this study, a multi-phase field model is employed to investigate both the effect of solid–liquid interfacial energy anisotropy and the effect of solid–solid interfacial energy anisotropy on tilted growth of eutectics. The findings reveal that both the solid–liquid interfacial energy anisotropy and the solid–solid interfacial energy anisotropy can induce the tilted growth of eutectics. The results also demonstrate that when the rotation angle is within a range of 30°–60°, the growth of tilted eutectics is governed jointly by the solid–solid interfacial energy anisotropy and the solid–liquid interfacial energy anisotropy; otherwise, it is mainly controlled by the solid–solid interfacial energy anisotropy. Further analysis shows that the unequal pinning angle at triple point caused by the adjustment of the force balance results in different solute-diffusion rates on both sides of triple point. This will further induce an asymmetrical concentration distribution along the pulling direction near the solid–liquid interface and the tilted growth of eutectics. Our findings not only shed light on the formation mechanism of tilted eutectics but also provide theoretical guidance for controlling the microstructure evolution during eutectic solidification.

Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of enhancement mode Al2O3/GaN MOSFETs (metal–oxide–semiconductor field-effect transistors) separately with sapphire substrate and Si substrate are prepared. It is found that the performance of sapphire substrate device is better than that of silicon substrate. Comparing these two devices, the maximum drain current of sapphire substrate device (401 mA/mm) is 1.76 times that of silicon substrate device (228 mA/mm), and the field-effect mobility (μ FEmax) of sapphire substrate device (176 cm2/V⋅s) is 1.83 times that of silicon substrate device (96 cm2/V⋅s). The conductive resistance of silicon substrate device is 21.2Ω ⋅mm, while that of sapphire substrate device is only 15.2Ω ⋅mm, which is 61% that of silicon substrate device. The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al2O3/GaN interface. Experimental studies show that (i) interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device, (ii) Both the border traps in Al2O3 dielectric near Al2O3/GaN and the interface traps in Al2O3/GaN interface have a significantly effect on device channel mobility, and (iii) the properties of gallium nitride materials on different substrates are different due to wet etching. The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.

We simulate the dynamic response of H 2 + in a linearly polarized laser field by numerically solving the time-dependent Schrödinger equation. The elliptically polarized high-order harmonics generated by H 2 + irradiated by the linearly polarized laser field are systematically investigated. The result shows that the amplitude and rotation of the ellipticity of harmonics are affected by the alignment angle and internuclear distance of the molecule. Analyzing the change in forces acted on the ionized electrons and the trajectories of the electrons, the phenomena are found to be due to the change in the direction of the total Coulomb forces from the two nuclei felt by the recollided ionized electrons in the direction perpendicular to the laser polarization direction. Based on the influence law, we can select the harmonics with a specific frequency band under different alignment angles and then synthesize the isolated attosecond pulses with different rotations, which can be continuously converted from right-handed circular polarization, linear polarization, and left-handed circular polarization by changing the alignment angle. This study provides a new possible approach to the real-time detection of molecular states by using attosecond pulses and obtaining more optimized harmonics with molecular properties.

In order to fabricate high-performance inverted perovskite solar cells (PeSCs), an appropriate hole transport layer (HTL) is essential since it will affect the hole extraction at perovskite/HTL interface and determine the crystallization quality of the subsequent perovskite films. Herein, a facile and simple method is developed by adding ethanolamine (ETA) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as HTL. The doping of a low-concentration ETA can efficiently modify the electrical properties of the PEDOT:PSS film and lower the highest occupied molecular orbital (HOMO) level, which is more suitable for the hole extraction from the perovskite to HTL. Besides, ETA-doped PEDOT:PSS will create a perovskite film with larger grain size and higher crystallinity. Hence, the results show that the open-circuit voltage of the device increases from 0.99 V to 1.06 V, and the corresponding power conversion efficiency (PCE) increases from 14.68% to 19.16%. The alkaline nature of ethanolamine greatly neutralizes the acidity of PEDOT:PSS, and plays a role in protecting the anode, leading the stability of the devices to be improved significantly. After being stored for 2000 h, the PCE of ETA-doped PEDOT:PSS devices can maintain 84.2% of the initial value, which is much higher than 67.1% of undoped devices.

A high-efficiency and high-power vertical-cavity surface-emitting laser (VCSEL) side-pumped rod Nd:YAG laser with temperature adaptability are demonstrated. The VCSEL side-pumped laser module is designed and optimized. Five VCSEL arrays are symmetrically located around the laser rod and a large size diffused reflection chamber is designed to ensure a uniform pump distribution. Furthermore, the absorbed pump power distribution of the rod is simulated to verify the uniformity of the pump absorption. Finally, a proof-of-principle experiment is performed in short linear cavity laser with single laser module. A continuous-wave output power of 658 W at 1064 nm is obtained, the corresponding optical-to-optical efficiency is 52.6%, and the power variations are ±0.7% over 400 s and ±3.1% over the temperature range from 16 °C to 26 °C. To the best of our knowledge, this is the highest output power and the highest optical-to-optical efficiency ever reported for VCSEL pumped solid-state lasers. By inserting a telescopic module into the cavity and optimizing the TEM00 mode volume, the average beam quality is measured to be M 2 = 1.34 under an output power of 102 W. The experimental results reveal that such a high power rod laser module with temperature stability is appropriate for field applications.

We investigate the relationship between the synchronous transition and the power law behavior in spiking networks which are composed of inhibitory neurons and balanced by dc current. In the region of the synchronous transition, the avalanche size and duration distribution obey a power law distribution. We demonstrate the robustness of the power law for event sizes at different parameters and multiple time scales. Importantly, the exponent of the event size and duration distribution can satisfy the critical scaling relation. By changing the network structure parameters in the parameter region of transition, quasicriticality is observed, that is, critical exponents depart away from the criticality while still hold approximately to a dynamical scaling relation. The results suggest that power law statistics can emerge in networks composed of inhibitory neurons when the networks are balanced by external driving signal.

Oxygen ions (O+) were implanted into fused silica at a fixed fluence of 1 × 1017 ions/cm2 with different ion energies ranging from 10 keV to 60 keV. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects (ODCs and E′ centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si–O–Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to 30 keV. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si–O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.

High-order harmonic generation (HHG) from an atom illuminated by a sinusoidally phase-modulated pulse is investigated by solving the time-dependent Schrödinger equation. The spectral shift that occurs in atomic HHG can be achieved easily using our laser pulse. It is shown that the photon energy of the generated harmonics is controllable within the range of 1 eV. The shift of the frequency peak position is rooted in the asymmetry of the rising and falling parts of the laser pulse. We also show that by varying the phase parameters in the frequency domain of the laser one can adjust and control the shift in atomic harmonic spectra.

A secure encryption scheme for color images based on channel fusion and spherical diffraction is proposed in this paper. In the proposed encryption scheme, a channel fusion technology based on the discrete wavelet transformation is used to transform color images into single-channel grayscale images, firstly. In the process of transformation, the hyperchaotic system is used to permutate and diffuse the information of red–green–blue (RGB) channels to reduce the correlation of channels. Then the fused image is encrypted by spherical diffraction transform. Finally, the complex-valued diffraction result is decomposed into two real parts by the improved equal module decomposition, which are the ciphertext and the private key. Compared with the traditional color image encryption schemes that encrypt RGB channels separately, the proposed scheme is highly secure and robust.

This work investigates the active control of a fully developed turbulent boundary layer by a submerged synthetic jet actuator. The impacts of the control are explored by measuring the streamwise velocities using particle image velocimetry, and reduction of the skin-friction drag is observed in a certain range downstream of the orifice. The coherent structure is defined and extracted using a spatial two-point correlation function, and it is found that the synthetic jet can efficiently reduce the streamwise scale of the coherent structure. Proper orthogonal decomposition analysis reveals that large-scale turbulent kinetic energy is significantly attenuated with the introduction of a synthetic jet. The conditional averaging results show that the induction effect of the prograde vortex on the low-speed fluid in a large-scale fluctuation velocity field is deadened, thereby suppressing the bursting process near the wall.

Molecular dynamics simulation of a sympathetically-cooled 113Cd+ ion crystal system is achieved. Moreover, the relationship between ions’ axial temperature and different electric parameters, including radio frequency voltage and end-cap voltage is depicted. Under stable trapping condition, optimum radio frequency voltage, corresponding to minimum temperature and the highest cooling efficiency, is obtained. The temperature is positively correlated with end-cap voltage. The relationship is also confirmed by a sympathetically-cooled 113Cd+ microwave clock. The pseudo-potential model is used to illustrate the relationship and influence mechanism. A reasonable index, indicating ions’ temperature, is proposed to quickly estimate the relative ions’ temperature. The investigation is helpful for ion crystal investigation, such as spatial configuration manipulation, sympathetic cooling efficiency enhancement, and temporal evolution.

The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 1011 cm−2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

Strontium titanate (SrTiO3) is a thermoelectric material with large Seebeck coefficient that has potential applications in high-temperature power generators. To simultaneously achieve a low thermal conductivity and high electrical conductivity, polycrystalline SrTiO3 with a multi-scale architecture was designed by the co-doping with lanthanum, cerium, and niobium. High-quality nano-powders were synthesized via a hydrothermal method. Nano-inclusions and a nano/micro-sized second phase precipitated during sintering to form mosaic crystal-like and epitaxial-like structures, which decreased the thermal conductivity. Substituting trivalent Ce and/or La with divalent Sr and substituting pentavalent Nb with tetravalent Ti enhanced the electrical conductivity without decreasing the Seebeck coefficient. By optimizing the dopant type and ratio, a low thermal conductivity of 2.77 W⋅m−1⋅K−1 and high PF of 1.1 mW⋅m−1⋅K−2 at 1000 K were obtained in the sample co-doped with 5-mol% La, 5-mol% Ce, and 5-mol% Nb, which induced a large ZT of 0.38 at 1000 K.

High-quality Fe-doped ZnS films have been fabricated by electron beam evaporation. After the doping, the fabricated films still maintain the preferential crystalline orientation and phase purity of the host ZnS. According to the observation of surface morphology, the root mean-square roughness of the samples increases slightly with the increase of doping content. All of the prepared samples are in cubic zinc blende structure of ZnS. Transmission spectrum confirms a more obvious dip near 3 μm with higher dopant concentration and it can be attributed to the typical 5E→5T2 transition of Fe2+. Fe-doped ZnS film is also successfully used for Q-switched Er:ZBLAN fiber laser.

Electron–electron correlation plays an important role in the underlying dynamics in physics and chemistry. Helium is the simplest and most fundamental two-electron system. The dynamic process of helium in a strong laser field is still a challenging issue because of the large calculation cost. In this study, a graphic processing unit (GPU) openACC based ab initio numerical simulations package HeTDSE is developed to solve the full-dimensional time-dependent Schrödinger equation of helium subjected to a strong laser pulse. HeTDSE uses B-spline basis sets expansion method to construct the radial part of the wavefunction, and the spherical harmonic functions is used to express for the angular part. Adams algorithm is employed for the time propagation. Our example shows that HeTDSE running on an NVIDIA Kepler K20 GPU can outperform the one on an Intel E5-2640 single CPU core by a factor of 147. HeTDSE code package can be obtained from the author or from the author’s personal website (doi: 10.13140/RG.2.2.15334.45128) directly under the GPL license, so HeTDSE can be downloaded, used and modified freely.

The nanoparticles suspended in a shear flow are subjected to a shear lift force, which is of great importance for the nanoparticle transport. In previous theoretical analysis on the shear lift, it is usually assumed that the particle temperature is equal to the temperature of the surrounding gas media. However, in some particular applications, the particle temperature can significantly differ from the gas temperature. In the present study, the effect of particle temperature on the shear lift of nanoparticles is investigated and the corresponding formulas of shear lift force are derived based on the gas kinetic theory. For extremely small nanoparticles (with radius R < 2 nm) or large nanoparticles (R > 20 nm), the influence of the particle temperature can be neglected. For the intermediate particle size, the relative error induced by the equal gas-particle temperature can be significant. Our findings can bring an insight into accurate evaluation of the nanoparticle transport properties.

Valley filter is a promising device for producing valley polarized current in graphene-like two-dimensional honeycomb lattice materials. The relatively large spin–orbit coupling in silicene contributes to remarkable quantum spin Hall effect, which leads to distinctive valley-dependent transport properties compared with intrinsic graphene. In this paper, quantized conductance and valley polarization in silicene nanoconstrictions are theoretically investigated in quantum spin-Hall insulator phase. Nearly perfect valley filter effect is found by aligning the gate voltage in the central constriction region. However, the valley polarization plateaus are shifted with the increase of spin–orbit coupling strength, accompanied by smooth variation of polarization reversal. Our findings provide new strategies to control the valley polarization in valleytronic devices.

A model predictive inverse method (MPIM) is presented to estimate the time- and space-dependent heat flux on the ablated boundary and the ablation velocity of the two-dimensional ablation system. For the method, first of all, the relationship between the heat flux and the temperatures of the measurement points inside the ablation material is established by the predictive model based on an influence relationship matrix. Meanwhile, the estimation task is formulated as an inverse heat transfer problem (IHTP) with consideration of ablation, which is described by an objective function of the temperatures at the measurement point. Then, the rolling optimization is used to solve the IHTP to online estimate the unknown heat flux on the ablated boundary. Furthermore, the movement law of the ablated boundary is reconstructed according to the estimation of the boundary heat flux. The effects of the temperature measurement errors, the number of future time steps, and the arrangement of the measurement points on the estimation results are analyzed in numerical experiments. On the basis of the numerical results, the effectiveness of the presented method is clarified.

We investigate the thermal stresses for GaAs layers grown on V-groove patterned Si substrates by the finite-element method. The results show that the thermal stress distribution near the interface in a patterned substrate is nonuniform, which is far different from that in a planar substrate. Comparing with the planar substrate, the thermal stress is significantly reduced for the GaAs layer on the patterned substrate. The effects of the width of the V-groove, the thickness, and the width of the SiO2 mask on the thermal stress are studied. It is found that the SiO2 mask and V-groove play a crucial role in the stress of the GaAs layer on Si substrate. The results indicate that when the width of V-groove is 50 nm, the width and the thickness of the SiO2 mask are both 100 nm, the GaAs layer is subjected to the minimum stress. Furthermore, Comparing with the planar substrate, the average stress of the GaAs epitaxial layer in the growth window region of the patterned substrate is reduced by 90%. These findings are useful in the optimal designing of growing high-quality GaAs films on patterned Si substrates.

A general solution is obtained to a canonical problem of the reflection and refraction of an arbitrary shaped beam by using a uniaxially anisotropic chiral slab. The reflected, internal as well as refracted shaped beams are expanded in terms of cylindrical vector wave functions, and the expansion coefficients are determined by using the boundary conditions and method of moments procedure. As two typical examples, the normalized field intensity distributions are evaluated for a fundamental Gaussian beam and Hermite–Gaussian beam, and some propagation properties, especially the negative refraction phenomenon, are discussed briefly.

We investigate the alignment dependence of the strong laser dissociation dynamics of molecule C 2 H 2 2 + in the frame of real-time and real-space time-dependent density function theory coupled with nonadiabatic quantum molecular dynamics (TDDFT-MD) simulation. This work is based on a recent experiment study “ultrafast electron diffraction imaging of bond breaking in di-ionized acetylene” [Wolter et al, Science 354, 308–312 (2016)]. Our simulations are in excellent agreement with the experimental data and the analysis confirms that the alignment dependence of the proton dissociation dynamics comes from the electron response of the driving laser pulse. Our results validate the ability of the TDDFT-MD method to reveal the underlying mechanism of experimentally observed and control molecular dissociation dynamics.

The cadmium sulphide (CdS) film is grown on cadmium telluride (CdTe) nanorods (NRs) arrays by different methods such as chemical bath deposition (CBD), magnetron sputtering (MS), and homogenous precipitation (HP) techniques. The impact of various deposition methods is explored in detail on the growth of CdTe/CdS composite film, the CdTe/CdS interface property, and solar cell efficiency. Compared to the CBD and HP methods, the MS method can improve the growth of the CdS on CdTe NRs with high crystalline quality. The device based on the CdS film prepared by the MS method demonstrates excellent photovoltaic performance, which has the potential for applications in solar cells.

We perform a computational simulation of light emissions from two sonoluminescent bubbles in water. Our simulation includes the radii of two bubbles, radiation acoustic pressures, and light emission spectra by numerically solving the pulsing equations of a two-bubble system and the equations of gas dynamics. The simulation results demonstrate that the motion of each bubble in the two-bubble system is restrained because of the radiation acoustic pressures from the other pulsing bubble. The restrained oscillation of a bubble with a small ambient radius is stronger than that of a bubble with a large ambient radius under the same driving acoustic pressure. This effect increases when the distance between the two bubbles decreases. When compared to single-bubble sonoluminescence, the interaction between two bubbles leads to generation of different spectral characteristics.

We investigate high-order harmonic generation from atoms irradiated by bichromatic counter-rotating circularly polarized laser pulses by numerically solving the time-dependent Schrödinger equation. It is found that the minimum energy position of the harmonic spectrum and the non-integer order optical radiation are greatly discrepant for different atomic potentials. By analyzing the quantum trajectory of the harmonic emission, discrepancies among the harmonic spectra from different potentials can be attributed to the action of the potential on the ionized electrons. In addition, based on the influence of the driving light intensity on the overall intensity and ellipticity of higher order harmonics, the physical conditions for generating a high-intensity circularly polarized harmonic can be obtained.

It is essential to determine the accumulative ultraviolet (UV) irradiation over a period of time in some cases, such as monitoring UV irradiation to the skin, solar disinfection of water, photoresist exposure, etc. UV colorimetric dosimeters, which use dyes’ color change to monitor the amount of UV exposure, have been widely studied. However, the exposure data of these UV colorimetric dosimeters can hardly be converted to digital signals, limiting their applications. In this paper, a UV dosimeter has been proposed and demonstrated based on the persistent photoconductivity (PPC) in zinc oxide microwires (ZnO MWs). The PPC effect usually results in high photoconductivity gain but low response speed, which has been regarded as a disadvantage for photodetectors. However, in this work, the unique characteristics of the PPC effect have been utilized to monitoring the accumulative exposure. We demonstrate that the photocurrent in the ZnO MWs depends on the accumulative UV exposure due to the PPC effect, thus the photocurrent can be utilized to determine the UV accumulation. The dosimeter is immune to visible light and exhibits a photoconductive gain of 2654, and the relative error of the dosimeter is about 10%. This UV dosimeter with electrical output is reusable and convenient to integrate with other electronic devices and may also open a new application area for the PPC effect.

The wave packet evolution of an atom irradiated by an intense laser pulse is systematically investigated by using the numerical solution of the time-dependent Schrödinger equation. There are two types of spatial interference structures in the time-dependent evolution of the atomic wave packet. With the increasing of the evolution time, the interference fringe spacing for type I (type II) becomes larger (smaller). As the wavelength of the incident laser increases, the interference of the wave packet is changed from type II to type I, and the shift of interference type can be attributed to the contribution of excited states by using the energy analysis of the time-dependent wave function.

Effects of refractory period on the dynamical range in excitable networks are studied by computer simulations and theoretical analysis. The first effect is that the maximum or peak of the dynamical range appears when the largest eigenvalue of adjacent matrix is larger than one. We present a modification of the theory of the critical point by considering the correlation between excited nodes and their neighbors, which is brought by the refractory period. Our analysis provides the interpretation for the shift of the peak of the dynamical range. The effect is negligible when the average degree of the network is large. The second effect is that the dynamical range increases as the length of refractory period increases, and it is independent of the average degree. We present the mechanism of the second effect. As the refractory period increases, the saturated response decreases. This makes the bottom boundary of the dynamical range smaller and the dynamical range extend.

There has been much interest in studying quasi-periodic events on earthquake models. Here we investigate quasi-periodic events in the avalanche time series on structured earthquake models by the analysis of the autocorrelation function and the fast Fourier transform. For random spatial earthquake models, quasi-periodic events are robust and we obtain a simple rule for a period that is proportional to the choice of unit time and the dissipation of the system. Moreover, computer simulations validate this rule for two-dimensional lattice models and cycle graphs, but our simulation results also show that small-world models, scale-free models, and random rule graphs do not have periodic phenomena. Although the periodicity of avalanche does not depend on the criticality of the system or the average degree of the system or the size of the system, there is evidence that it depends on the time series of the average force of the system.

We ab initio investigate the interaction between the hydrogen atom and the inhomogeneous field which is induced by resonant plasmons within a metal nanostructure. Same as normal laser pulse (homogeneous field), only odd-harmonic generation occurs when the bow-tie nanostructure is utilized. For the single nanotip case, the even-harmonic generation can be distinctly found in the harmonic emission spectrum. By investigating the symmetry and trajectories of different inhomogeneous fields, we demonstrate that the breaking symmetry of system can enable even high harmonic generations.

A general scheme for the investigation of scattering by a chiral sphere under arbitrary monochromatic laser beam illumination is presented. The scattered and internal fields are expanded by using appropriate spherical vector wave functions, and their expansion coefficients are determined by the boundary conditions and the projection method. Targeting multiple incidence forms such as Gaussian beam, Hermite–Gaussian beam, doughnut mode beam and zero-order Bessel beam, the influence and propagation of near-surface intensity field for a chiral sphere are analyzed. These properties are very important for studying the properties of chiral media, and for manipulating the optical tweezers and super-resolution imaging of particles.