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Your search keyword '"Li, Zhi‐Yuan"' showing total 32 results
Start Over Author "Li, Zhi‐Yuan" Journal chinese physics b
32 results on '"Li, Zhi‐Yuan"'

31. Systematic study on visible light collimation by nanostructured slits in the metal surface

Author

Li Zhi-Yuan, Liu Rong-Juan, Hua Yi-Lei, Fu Jin-Xin, Li Jia-Fang, and Chen Yu-Hui

Subjects
Diffraction, Wavelength, Materials science, Optics, business.industry, Surface plasmon, General Physics and Astronomy, business, Polarization (waves), Ray, Plasmon, Collimated light, Visible spectrum
Abstract

We present a systematic experimental investigation on visible light collimation by a nanostructured slit flanked with a pair of periodic array of grooves in gold thin film. A wide variety of aspects are considered, such as the polarization state, the transport path of incident light, the groove—groove spacing, the groove width and depth. Our results clearly show that the relationship between the collimation wavelength and the periodicity of the slit-groove structure accords well with the surface plasmon dispersion model proposed by previous researchers. Furthermore, the surface plasmon wave phase retardation effect induced by the surface structure is also verified via the measurement for samples with different groove widths and depths. These results indicate that the detailed geometry of the groove structure has obvious impacts on the collimation effect and the angular distribution of the diffraction light in the subwavelength plasmonic system.

Published
2011

32. Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors.

Author

Zhao Jing-Tao, Wang Yu-Tang, Li Zhi-Yuan, Yang Ming, Lin Zhao-Jun, Lv Yuan-Jie, and Feng Zhi-Hong

Subjects
HETEROJUNCTION field effect transistors, ALUMINUM gallium nitride, SUBSTRATES (Materials science), SWITCHING power supplies, ELECTRIC potential, TRANSMISSION line matrix methods
Abstract

A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer. [ABSTRACT FROM AUTHOR]

Published
2015
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