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In this paper, by utilizing the extended phase-matching (EPM) method, we investigate the generation of single photons with high spectral-purity in a magnesium-doped periodically-poled lithium niobate (MgO:PPLN) crystal via the spontaneous parametric down-conversion (SPDC) process. By adjusting the temperature and pump wavelength, the wavelength of single photons can be tuned from telecom to mid-infrared (MIR) wavelengths, among which the spectral-purity can be above 0.95 with high transmission filters. In experiments, we engineer a MgO:PPLN with poling period of 20.35 µm which emit the EPM photon pair centered at 1496.6 nm and 1644.0 nm and carry out the joint spectral intensity (JSI) and Glauber;s second-order self-correlation measurements to characterize the spectral purity. The results are in good agreement with the numerical simulations. Our work may provide a valuable approach for the generation of spectrally pure single photons at a wide range of wavelengths which is competent for various photonic quantum technologies.

The generation of terahertz (THz) waves by focusing a femtosecond pulsed laser beam at a distance is able to overcome the strong absorption properties of air and has rapidly attracted the attention of the industry. However, the poor directionality of the THz wave radiation generated by this method is not conducive to THz wave applications. By controlling the morphology of the ultrafast laser-excited plasma filament and its electron density distribution through coherent beam combining (CBC) technology, we achieve direct THz beam shaping and are able to obtain THz wave radiation of Gaussian or arbitrary transverse distribution. The novel experimental approach proposed in this paper opens up the research field of direct THz wave shaping using plasma. Moreover, it innovates multi-parameter convergence algorithms and, by doing so, has the potential to find beam patterns with higher energy conversion efficiency and break the energy limit of THz waves emitted by lasers at high power.

A four-stage cascaded variable optical attenuator (VOA) with a large attenuation range is presented. The VOA is based on a Mach–Zehnder interferometer (MZI) and fabricated in a silica-based planar lightwave circuit (PLC) platform. The thermo-optic effect is used to achieve intensity modulation. The measured maximum attenuation of the four-stage cascaded VOA is 88.38 dB. The chip is also tested in a quantum key distribution (QKD) system to generate signal and decoy states. The mean photon number after attenuation of the four-stage cascaded VOA is less than 0.1, which can meet the requirement of QKD.

Quantum key distribution (QKD) system based on passive silica planar lightwave circuit (PLC) asymmetric Mach–Zehnder interferometers (AMZI) is characterized with thermal stability, low loss and sufficient integration scalability. However, waveguide stresses, both intrinsic and temperature-induced stresses, have significant impacts on the stable operation of the system. We have designed silica AMZI chips of 400 ps delay, with bend waveguides length equalized for both long and short arms to balance the stresses thereof. The temperature characteristics of the silica PLC AMZI chip are studied. The interference visibility at the single photon level is kept higher than 95% over a wide temperature range of 12 °C. The delay time change is 0.321 ps within a temperature change of 40 °C. The spectral shift is 0.0011~nm/0.1 °C. Temperature-induced delay time and peak wavelength variations do not affect the interference visibility. The experiment results demonstrate the advantage of being tolerant to chip temperature fluctuations.

A quantum key distribution transmitter chip based on hybrid-integration of silica planar light-wave circuit (PLC) and lithium niobates (LN) modulator PLC is presented. The silica part consists of a tunable directional coupler and 400-ps delay line, and the LN part is made up of a Y-branch, with electro-optic modulators on both arms. The two parts are facet-coupled to form an asymmetric Mach–Zehnder interferometer. We successfully encode and decode four BB84 states at 156.25-MHz repetition rate. Fast phase-encoding of 0 or π is achieved, with interference fringe visibilities 78.53% and 82.68% for states |+〉 and |–〉, respectively. With the aid of an extra off-chip LN intensity modulator, two time-bin states are prepared and the extinction ratios are 18.65 dB and 15.46 dB for states |0〉 and |1〉, respectively.

Lunar dust is one of the most threatening problems confronting the return of human beings to the moon. In this work we studied the spatial distribution behavior of charged lunar dust in the solar wind plasma environment in the south polar region of the moon and considered the influence of a mini-crater using Spacecraft Plasma Interactions Software. The distribution of dust and plasma at low solar altitude angles of 20° and 0° was studied, and the spatial density of lunar dust was ∼ 1010.4 m−3 and ∼ 1011.5 m−3, respectively. This is because a higher surface potential will result in transportation of small dust particles and photoelectrons can also neutralize positively charged lunar dust. The dust density in the plasma void region created by a mini-crater with a 5 m high wall was studied. We obtained a quasi-neutral electric environment in the plasma void region of the mini-crater, and the dust density was about a magnitude lower than that in other regions. The dust risk to a spacesuit is much lower on the nightside than on the dayside, but there is severe charged lunar dust transport in the region between light and shade, which is dominated by the difference in surface and plasma potential caused by photoelectrons.

By utilizing the extended phase-matching (EPM) method, we investigate the generation of single photons with high spectral-purity in a magnesium-doped periodically-poled lithium niobate (MgO:PPLN) crystal via the spontaneous parametric down-conversion (SPDC) process. By adjusting the temperature and pump wavelength, the wavelength of the single photons can be tuned from telecom to mid-infrared (MIR) wavelengths, for which the spectral-purity can be above 0.95 with high transmission filters. In experiments, we engineer a MgO:PPLN with poling period of 20.35 μm which emits the EPM photon pair centered at 1496.6 nm and 1644.0 nm and carry out the joint spectral intensity (JSI) and Glauber’s second-order self-correlation measurements to characterize the spectral purity. The results are in good agreement with the numerical simulations. Our work may provide a valuable approach for the generation of spectrally pure single photons at a wide range of wavelengths which is competent for various photonic quantum technologies.

A scheme of generating energetic ions by the interaction of an ultrahigh-intensity laser pulse and a thin solid foil is studied. The combination of the effects of radiation pressure and Coulomb explosion makes the ion acceleration more effective. The maximum ion velocity variation with time is predicted theoretically while the temporal evolution of the electrostatic field due to the Coulomb explosion is taken into consideration. Two-dimensional particle-in-cell simulations are done to verify the theory.

The Ho:YAP crystal is grown by the Czochralski technique. The room-temperature polarized absorption spectra of Ho:YAP crystal was measured on a c-cut sample with 1 at% holmium. According to the obtained Judd-Ofelt intensity parameters Omega(2) = 1.42 x 10(-20) cm(2), Omega(4) = 2.92 x 10(-20) cm(2), and Omega(6) = 1.71 x 10(-20) cm(2), this paper calculated the fluorescence lifetime to be 6 ms for I-5(7) -> I-5(8) transition, and the integrated emission cross section to be 2.24 x 10(-18) cm(2). It investigates the room-temperature Ho:YAP laser end-pumped by a 1.91-mu m Tm:YLF laser. The maximum output power was 4.1 W when the incident 1.91-mu m pump power was 14.4W. The slope efficiency is 40.8%, corresponding to an optical-to-optical conversion efficiency of 28.4%. The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.

This paper reports that the TM3+:Lu2SiO5 (Tm:LSO) crystal is grown by Czochralski technique. The room-temperature absorption spectra of Tm:LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Omega(2)=9.3155 x 10(-20) cm(2), Omega(4)=8.4103 x 10(-20) cm(2), Omega(6)=1.5908 x 10(-20) cm(2), the fluorescence lifetime is calculated to be 2.03 ms for F-3(4) -> H-3(6) transition, and the integrated emission cross section is 5.81 x 10(-18) cm(2). Room-temperature laser action near 2 mu m under diode pumping is experimentally evaluated in Tm:LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuous-wave maximum output power of 0.67 W. The emission wavelengths of Tm:LSO laser are centred around 2.06 mu m with spectral bandwidth of similar to 13.6 nm.

The anomalous hysteresis in a perovskite solar cell induced by an asymmetric field is confirmed by a capacitance–voltage measurement. By applying several cycles of alternating reverse and forward scans, this hysteresis phenomenon is obviously alleviated, resulting in a hysteresis-less state in the perovskite solar cell. Meanwhile, the open-circuit voltage and power conversion efficiency of the perovskite solar cell are enhanced by 55.74% and 61.30%, respectively, while the current density and fill factor keep almost invariable. The operation of alleviating hysteresis is essential for further research and is likely to bring in performance gains.

We investigate the performances of the near-ultraviolet (about 350 nm–360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-Al x Ga1−x N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate.

We investigate the charge and spin gaps, and the spin structure in half-filled one-dimensional Hubbard superlattices with one repulsive site and L0 free sites per unit cell. For odd L0, it is correlated metal at the particle–hole symmetric point, and then turns into band insulator beyond this point. For even L0, the system has a Mott insulator phase around the particle–hole symmetric point and undergoes a metal–insulator transition with on-site repulsion U increasing. For large U, there exists a multiperiodic spin structure, which results from the ferromagnetic (antiferromagnetic) correlation between the nearest neighboring repulsive sites for odd (even) L0.

(Sr0.95Gd0.05)TiO3 (SGTO) ceramics are successfully prepared via spark plasma sintering (SPS) respectively at 1548, 1648, and 1748 K by using submicron-sized SGTO powders synthesized from a sol–gel method. The densities, microstructures, and thermoelectric properties of the SGTO ceramics are studied. Though the Seebeck coefficient shows no obvious difference in the case that SPS temperatures range from 1548 K to 1648 K, the electrical conductivity and the thermal conductivity increase remarkably due to the increase in grain size and density. The sample has a density higher than 98% theoretical density as the sintering temperature increases up to 1648 K and shows average grain sizes increasing from ~ 0.7 μm to 7 μm until 1748 K. As a result, the maximum of the dimensionless figure of merit of ~ 0.24 is achieved at ~ 1000 K for the samples sintered at 1648 K and 1748 K, which was ~ 71% larger than that (0.14 at ~ 1000 K) for the sample sintered at 1548 K due to the enhancement of the power factor.

Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well (MQW) solar cells are investigated. It is found that due to the reduction of piezoelectric polarization and the enhancement of tunneling transport of photo-generated carriers in MQWs, the external quantum efficiency (EQE) of the solar cells increases in a low energy spectral range (λ > 370 nm) when the barrier thickness value decreases from 15 nm to 7.5 nm. But the EQE decreases abruptly when the barrier thickness value decreases down to 3.75 nm. The reasons for these experimental results are analyzed. We are aware that the reduction of depletion width in MQW region, caused by the high resistivity of the p-type GaN layer may be the main reason for the abnormally low EQE value at long wavelengths (λ > 370 nm).

The effects of helium (He) on the sliding and mechanical properties of a vanadium (V)Σ5(310)/[001] grain boundary (GB) have been investigated using a first-principles method. It has been found that He was energetically favorable sitting at the GB region with a segregation energy of −0.27 eV, which was attributed to the special atomic configurations and charge density distributions of the GB. The maximal sliding energy barrier of the He-doped GB was calculated to be 1.73 J/m2, ~ 35% larger than that of the clean GB. This suggested that the presence of He would hinder the V GB mobility. Based on the thermodynamic criterion, the total energy calculations indicated that the embrittlement of V GB would be enhanced by He segregation.

Well-aligned and uniform Co0.8Zn0.2Fe2O4 nanofibers (NFs) are prepared by electrospinning via sol—gel and subsequent heat treatment. Each of the as-spun NFs has a diameter of about 300 nm and a smooth surface morphology. The scanning electron microscope (SEM) image shows that the diameter decreases to 70 nm after the Co0.8Zn0.2Fe2O4 NF has been annealed at 650 °C for 3 h. The structure and chemical of Co0.8Zn0.2Fe2O4 NF are investigated by X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy (EDS), respectively. Single phase cubic spinel structure, Co0.8Zn0.2Fe2O4 NF, is successfully obtained after having been calcined at 550 °C in air for 3 h, and a reduced lattice constant of the Co0.8Zn0.2Fe2O4 NF provides the evidence of effective Zn2+ substitution. The magnetic measurements show that the substitution of Zn2+ for Co2+, i.e., the introduction of non-magnetic Zn2+ ions into A sites, can increase the saturation magnetization (Ms) and reduce the coercivity (Hc). The obtained Hc results of different samples reveal that the critical single-domain size of the Co0.8Zn0.2Fe2O4 NF is approximately 44 nm. By doping Zn2+ with different concentrations, the morphologies of Co1−xZnxFe2O4 (0 ≤ x ≤ 0.5) NFs do not show obvious changes. For magnetic properties, the Ms increases and Hc decreases monotonically, respectively.

The influences of polarization and p-region doping concentration on the photocurrent response of Al0.4Ga0.6N/Al0.4Ga0.6N /Al0.65Ga0.35N p—i—n avalanche photodetector are studied in a wide range of reverse bias voltages. The simulation results indicate that the photocurrent under high inverse bias voltage decreases with the increase of polarization effect, but increases rapidly with the increase of effective doping concentration in p-type region. These phenomena are analyzed based on the calculations of the intensity and distribution of the electric field. A high p-region doping concentration in the p—i—n avalanche photodetector is shown to be important for the efficient compensation for the detrimental polarization-induced electrostatic field.

The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p—i—n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm2 to 0.95 mA/cm2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells.

InGaN/GaN p—i—n solar cells, each with an undoped In0.12Ga0.88N absorption layer, are grown on c-plane sapphire substrates by metal—organic chemical vapor deposition. The effects of the thickness and dislocation density of the absorption layer on the collection efficiency of InGaN-based solar cells are analyzed, and the experimental results demonstrate that the thickness of the InGaN layer and the dislocation density significantly affect the performance. An optimized InGaN-based solar cell with a peak external quantum efficiency of 57% at a wavelength of 371 nm is reported. The full width at half maximum of the rocking curve of the (0002) InGaN layer is 180 arcsec.

In situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above a low-temperature GaN buffer layer on a c-plane sapphire substrate by metalorganic chemical vapour deposition. It is found that the lateral growth of the GaN islands and their coalescence are promoted in the initial growth stage if optimized nitridation time and temperature are selected when the substrate is pre-exposed to ammonia. As confirmed by atomic force microscopy observations, the quality of the GaN epilayers is closely dependent on the surface morphology of the nitridated buffer layer, especially grain size and nucleation density.