1. Enhanced energy storage behaviors in free-standing antiferroelectric Pb(Zr0.95Ti0.05)O3 thin membranes.
- Author
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Zheng-Hu Zuo, Qing-Feng Zhan, Bin Chen, Hua-Li Yang, Yi-Wei Liu, Lu-Ping Liu, Ya-Li Xie, and Run-Wei Li
- Subjects
ENERGY storage ,ANTIFERROELECTRIC materials ,FORCE & energy ,POWER (Mechanics) ,ANTIFERROELECTRICITY - Abstract
Free-standing antiferroelectric Pb(Zr
0.95 Ti0.05 )O3 (PZT(95/5)) thin film is fabricated on 200-nm-thick Pt foil by using pulsed laser deposition. X-ray diffraction patterns indicate that free-standing PZT(95/5) film possesses an a-axis preferred orientation. The critical electric field for the 300-nm-thick free-standing PZT(95/5) film transiting from antiferroelectric to ferroelectric phases is increased to 770 kV/cm, but its saturation polarization remains almost unchanged as compared with that of the substrate-clamped PZT(95/5) film. The energy storage density and energy efficiency of the substrate-clamped PZT(95/5) film are 6.49 J/cm3 and 54.5%, respectively. In contrast, after removing the substrate, the energy storage density and energy efficiency of the free-standing PZT(95/5) film are enhanced up to 17.45 J/cm3 and 67.9%, respectively. [ABSTRACT FROM AUTHOR]- Published
- 2016
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