9 results on '"Mi, Min Han"'
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2. In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT
3. Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
4. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
5. Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
6. Improved performance of AlGaN/GaN HEMT by N 2 O plasma pre-treatment
7. Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain
8. Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage
9. Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment.
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