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Phase matching quantum key distribution is a promising scheme for remote quantum key distribution, breaking through the traditional linear key-rate bound. In practical applications, finite data size can cause significant system performance deterioration when data size is below 1010. In this paper, an improved statistical fluctuation analysis method is applied for the first time to two decoy-states phase matching quantum key distribution, offering new insights and potential solutions for improving the key generation rate and the maximum transmission distance while maintaining security. Moreover, we also compares the impacts of the proposed improved statistical fluctuation analysis method to those of the Gaussian approximation and Chernoff-Hoeffding boundary methods on system performance. The simulation results show that the proposed scheme significantly improves key generation rate and maximum transmission distance compared to the Chernoff-Hoeffding approach, and approaches the results obtained when the Gaussian approximation is employed. At the same time, the proposed scheme retains the same security level as the Chernoff-Hoeffding method, and is even more secure than the Gaussian approximation.

The alloying and magnetic disordering effects on site occupation, elastic property, and phase stability of Co2 YGa (Y = Cr, V, and Ni) shape memory alloys are systematically investigated using the first-principles exact muffin-tin orbitals method. It is shown that with the increasing magnetic disordering degree y, their tetragonal shear elastic constant C′ (i.e., (C 11 – C 12)/2) of the L21 phase decreases whereas the elastic anisotropy A increases, and upon tetragonal distortions the cubic phase gets more and more unstable. Co2CrGa and Co2VGa alloys with y ≥ 0.2 thus can show the martensitic transformation (MT) from L21 to D022 as well as Co2NiGa. In off-stoichiometric alloys, the site preference is controlled by both the alloying and magnetic effects. At the ferromagnetism state, the excessive Ga atoms always tend to take the Y sublattices, whereas the excessive Co atom favor the Y sites when Y = Cr, and the excessive Y atoms prefer the Co sites when Y = Ni. The Ga-deficient Y = V alloys can also occur the MT at the ferromagnetism state by means of Co or V doping, and the MT temperature T M should increase with their addition. In the corresponding ferromagnetism Y = Cr alloys, nevertheless, with Co or Cr substituting for Ga, the reentrant MT (RMT) from D022 to L21 is promoted and then T M for the RMT should decrease. The alloying effect on the MT of these alloys is finally well explained by means of the Jahn–Teller effect at the paramagnetic state. At the ferromagnetism state, it may originate from the competition between the austenite and martensite about their strength of the covalent banding between Co and Ga as well as Y and Ga.

The polymer spin coating is critical in flexible electronic manufaction and micro-electro-mechanical system (MEMS) devices due to its simple operation, and uniformly coated layers. Some researchers focus on the effects of spin coating parameters such as wafer rotating speed, the viscosity of the coating liquid and solvent evaporation on final film thickness. In this work, the influence of substrate curvature on film thickness distribution is considered. A new parameter which represents the edge bead effect ratio (r e) is proposed to investigate the influence factor of edge bead effect. Several operation parameters including the curvature of the substrate and the wafer-spin speed are taken into account to study the effects on the film thickness uniformity and edge-bead ratio. The morphologies and film thickness values of the spin-coated PDMS films under various substrate curvatures and coating speeds are measured with laser confocal microscopy. According to the results, both the convex and concave substrate will help to reduce the edge-bead effect significantly and thin film with better surface morphology can be obtained at high spin speed. Additionally, the relationship between the edge-bead ratio and the thin film thickness is like parabolic curve instead of linear dependence. This work may contribute to the mass production of flexible electronic devices.

Colloidal ZnAgInSe (ZAISe) quantum dots (QDs) with different particle sizes were obtained by accommodating the reaction time. In the previous research, photoluminescence (PL) of ZAISe QDs only could be tuned by changing the composition. In this work the size-tunable photoluminescence was observed successfully. The red shift in the photoluminescence spectra was caused by the quantum confinement effect. The time-resolved photoluminescence indicated that the luminescence mechanisms of the ZAISe QDs were contributed by three recombination processes. Furthermore, the temperature-dependent PL spectra were investigated. We verified the regular change of temperature-dependent PL intensity, peak energy, and the emission linewidth of broadening for ZAISe QDs. According to these fitting data, the activation energy () of ZAISe QDs with different nanocrystal sizes was obtained and the stability of luminescence was discussed.

Using the scattering-matrix method, we investigate the thermal conductance in a two-slit quantum waveguide at low temperature. The results show that the total thermal conductance decreases monotonically with temperature increasing. Moreover, we find that the behaviours of the thermal conductance versus temperature are different for different types of slits.

An epitaxial ZnO thin film was entirely fabricated by pulsed laser deposition. Both the orientation and the size of the crystallites were studied. The X-ray diffraction (XRD) patterns of the film show strong c-axis oriented crystal structure with preferred (002) orientation. The Phi-scan XRD pattern confirms that the epitaxial ZnO exhibits a single-domain wurtzite structure with hexagonal symmetry. In situ high-temperature XRD studies of ZnO thin film show that the crystallite size increases with increasing temperature, and (002) peaks shift systematically toward lower 2θ values due to the change of lattice parameters. The lattice parameters show linear increase in their values with increasing temperature.