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Owing to the influence of sampling loss, cavity difference and detecting source, the multi-optical parameter measurement of atmospheric aerosol cannot be detected simultaneously in the same reference environment. In order to solve this problem, a new method of simultaneously detecting the aerosol optical parameters by coupling cavity ring-down spectrometer with photoacoustic spectroscopy is proposed. Firstly, the coupled photoacoustic cavity is formed by the organic fusion of the photoacoustic cavity and the ring-down cavity. Secondly, the integrated design of the coupling spectroscopy system is carried out. Finally, the extinction coefficient and absorption coefficient of aerosol are measured simultaneously by the system, and then the aerosol scattering coefficient and single albedo are calculated indirectly. The accuracy of the system is verified by comparing with the data from the environmental quality monitoring station, which provides a new idea for the detection of multi-optical characteristics of atmospheric aerosol.

The tokamak start-up is a very important phase during the process to obtain a suitable equalizing plasma, and its governing model can be described as a set of nonlinear ordinary differential equations (ODEs). In this paper, we first estimate the parameters in the original model and set up an accurate model to express how the variables change during the start-up phase, especially how the plasma current changes with respect to time and the loop voltage. Then, we apply the control parameterization method to obtain an approximate optimal parameters selection problem for the loop voltage design to achieve a desired plasma current target. Computational optimal control techniques such as the variational method and the costate method are employed to solve the problem, respectively. Finally, numerical simulations are performed and the results obtained via different methods are compared. Our numerical parameterization method and optimization procedure turn out to be effective.

InGaN/AlInGaN superlattice (SL) is designed as the electron blocking layer (EBL) of an InGaN/GaN-based light-emitting diode (LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency (IQE), current—voltage (I—V) performance curve, light output—current (L—I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.

In this paper, we consider a numerical approximation for the boundary optimal control problem with the control constraint governed by a heat equation defined in a variable domain. For this variable domain problem, the boundary of the domain is moving and the shape of the boundary is defined by a known time-dependent function. By making use of the Galerkin finite element method, we first project the original optimal control problem into a semi-discrete optimal control problem governed by a system of ordinary differential equations. Then, based on the aforementioned semi-discrete problem, we apply the control parameterization method to obtain an optimal parameter selection problem governed by a lumped parameter system, which can be solved as a nonlinear optimization problem by a Sequential Quadratic Programming (SQP) algorithm. The numerical simulation is given to illustrate the effectiveness of our numerical approximation for the variable domain problem with the finite element method and the control parameterization method.

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

The performance of a multiple quantum well (MQW) InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.

InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes (LEDs). The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.