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We investigated single-electron tunneling through single and coupling dopant-induced quantum dots (QDs) in silicon junctionless nanowire transistor (JNT) by varying temperatures and bias voltages. We observed that two possible charge states of the isolated QD confined in the axis of the initial narrowest channel are successively occupied as the temperature increases above 30 K. The resonance states of the double single-electron peaks emerge below the Hubbard band, at which several subpeaks are clearly observed respectively in the double oscillated current peaks due to the coupling of the QDs in the atomic scale channel. The electric field of bias voltage between the source and the drain could remarkably enhance the tunneling possibility of the single-electron current and the coupling strength of several dopant atoms. This finding demonstrates that silicon JNTs are the promising potential candidates to realize the single dopant atom transistors operating at room temperature. [ABSTRACT FROM AUTHOR]

We demonstrate electron transport spectroscopy through a dopant atom array in n-doped silicon junctionless nanowire transistors within a temperature range from 6 K to 250 K. Several current steps are observed at the initial stage of the transfer curves below 75 K, which result from the electron transport from Hubbard bands to one-dimensional conduction band. The current-off voltages in the transfer curves have a strikingly positive shift below 20 K and a negative shift above 20 K due to the electrostatic screening induced by the ionized dopant atoms. There exists the minimum electron mobility at a critical temperature of 20 K, resulting from the interplay between thermal activation and impurity scattering. Furthermore, electron transport behaviors change from hopping conductance to thermal activation conductance at the temperature of 30 K. [ABSTRACT FROM AUTHOR]

We discuss the random dopant effects in long channel junctionless transistor associated with quantum confinement effects. The electrical measurement reveals the threshold voltage variability induced by the random dopant fluctuation. Quantum transport features in Hubbard systems are observed in heavily phosphorus-doped channel. We investigate the single electron transfer via donor-induced quantum dots in junctionless nanowire transistors with heavily phosphorus-doped channel, due to the formation of impurity Hubbard bands. While in the lightly doped devices, one-dimensional quantum transport is only observed at low temperature. In this sense, phonon-assisted resonant-tunneling is suppressed due to misaligned levels formed in a few isolated quantum dots at cryogenic temperature. We observe the Anderson-Mott transition from isolate electron state to impurity bands as the doping concentration is increased. [ABSTRACT FROM AUTHOR]

High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate. Hexagonal InAs nanowires are uniformly grown between face-to-face (111) vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers, namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2 × 105 are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits. [ABSTRACT FROM AUTHOR]

We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the temperature-dependent conductance demonstrates the transport behaviors of variable-range hopping (below 30 K) and nearest-neighbor hopping (above 30 K). The activation energy for the charge delocalization gradually decreases due to the confinement potential of the conduction channel decreasing from the threshold voltage to the flatband voltage. With the increase of the source–drain bias, the activation energy increases in a temperature range from 30 K to 100 K at a fixed gate voltage, but decreases above the temperature of 100 K. [ABSTRACT FROM AUTHOR]

The optical properties of four kinds of lubricating greases (urea, lithium, extreme pressure lithium, molybdenum disulfide lithium greases) with different NLGL (National Lubricant Grease Institute of America) numbers were investigated using terahertz time-domain spectroscopy. Greases with different NLGL grades have unique spectral features in the terahertz range. Comparison of the experimental data with predictions based on Lorentz--Lorenz theory exhibited that the refractive indices of each kind of lubricating grease were dependent on the their consistency. In addition, molybdenum disulfide (MoS2) as a libricant additive shows strong absorption from 0.2 to 1.4 THz, leading to higher absorption of MoS2-lithium grease than that of lithium grease. [ABSTRACT FROM AUTHOR]

Silver nanocluster embedded ZnO composite thin film was observed to have an angle-sensitive and fast photovoltaic effect in the angle range from [?]90deg to 90deg, its peak value and the polarity varied regularly with the angle of incidence of the 1.064-mm pulsed Nd:YAG laser radiation onto the ZnO surface. Meanwhile, for each photovoltaic signal, its rising time reached [?]2 ns with an open-circuit photovoltage of [?]2 ns full width at half-maximum. This angle-sensitive fast photovoltaic effect is expected to put this composite film a candidate for angle-sensitive and fast photodetector. [ABSTRACT FROM AUTHOR]

This paper investigates the photovoltaic properties of miscut LiNbO3 single crystal with different thicknesses under irradiation of a 248 nm ultraviolet laser pulse with 20 ns duration without an applied bias. Nanosecond photovoltaic response is observed and faster rise time is obtained in thinner samples. In accord with the 248 nm laser duration, the full width at half maximum of the photovoltaic signals keeps a constant of [?] 20 ns. With decrease of the crystal thickness, the photovoltaic sensitivity was improved rapidly at first and then decreased, and the maximum photovoltage occurred at 0.38 mm-thick single crystal. The present results demonstrate that decreasing the LiNbO3 single crystal thickness can obtain faster response time and improve the photovoltaic sensitivity. [ABSTRACT FROM AUTHOR]