Search

Using a Monte Carlo simulation tool of the multi-functional package for SEEs Analysis (MUFPSA), we study the temporal characteristics of ion-velocity susceptibility to the single event upset (SEU) effect, including the deposited energy, traversed time within the device, and profile of the current pulse. The results show that the averaged dposited energy decreases with the increase of the ion-velocity, and incident ions of 209Bi have a wider distribution of energy deposition than 132Xe at the same ion-velocity. Additionally, the traversed time presents an obvious decreasing trend with the increase of ion-velocity. Concurrently, ion-velocity certainly has an influence on the current pulse and then it presents a particular regularity. The detailed discussion is conducted to estimate the relevant linear energy transfer (LET) of incident ions and the SEU cross section of the testing device from experiment and simulation and to critically consider the metric of LET.

The influence of the metric of linear energy transfer (LET) on single event upset (SEU), particularly multiple bit upset (MBU) in a hypothetical 90-nm static random access memory (SRAM) is explored. To explain the odd point of higher LET incident ion but induced lower cross section in the curve of SEU cross section, MBUs induced by incident ions 132Xe and 209Bi with the same LET but different energies at oblique incidence are investigated using multi-functional package for single event effect analysis (MUFPSA). In addition, a comprehensive analytical model of the radial track structure is incorporated into MUFPSA, which is a complementation for assessing and interpreting MBU susceptibility of SRAM. The results show that (i) with the increase of incident angle, MBU multiplicity and probability each present an increasing trend; (ii) due to the higher ion relative velocity and longer range of δ electrons, higher energy ions trigger the MBU with less probability than lower energy ions.

Monte Carlo simulations reveal considerable straggling of energy loss by the same ions with the same energy in fully-depleted silicon-on-insulator (FDSOI) devices with ultra-thin sensitive silicon layers down to 2.5 nm. The absolute straggling of deposited energy decreases with decreasing thickness of the active silicon layer. While the relative straggling increases gradually with decreasing thickness of silicon films and exhibits a sharp rise as the thickness of the silicon film descends below a threshold value of 50 nm, with the dispersion of deposited energy ascending above ±10%. Ion species and energy dependence of the energy-loss straggling are also investigated. For a given beam, the dispersion of deposited energy results in large uncertainty on the actual linear energy transfer (LET) of incident ions, and thus single event effect (SEE) responses, which pose great challenges for traditional error rate prediction methods.

Experimental evidence is presented relevant to the angular dependences of multiple-bit upset (MBU) rates and patterns in static random access memories (SRAMs) under heavy ion irradiation. The single event upset (SEU) cross sections under tilted ion strikes are overestimated by 23.9%–84.6%, compared with under normally incident ion with the equivalent linear energy transfer (LET) value of ~ 41 MeV/(mg/cm2), which can be partially explained by the fact that the MBU rate for tilted ions of 30° is 8.5%–9.8% higher than for normally incident ions. While at a lower LET of ~ 9.5 MeV/(mg/cm2), no clear discrepancy is observed. Moreover, since the ion trajectories at normal and tilted incidences are different, the predominant double-bit upset (DBU) patterns measured are different in both conditions. Those differences depend on the LET values of heavy ions and devices under test. Thus, effective LET method should be used carefully in ground-based testing of single event effects (SEE) sensitivity, especially in MBU-sensitive devices.

We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain-drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.