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We prepared the isolated micrometer-sized diamond particles without seeding on the substrate in hot filament chemical vapor deposition. The diamond particles with specific crystallographic planes and strong silicon-vacancy (SiV) photoluminescence (PL) have been prepared by adjusting the growth pressure. As the growth pressure increases from 2.5 to 3.5 kPa, the diamond particles transit from composite planes of {100} and {111} to only smooth {111} planes. The {111}-faceted diamond particles present better crystal quality and stronger normalized intensity of SiV PL with a narrower bandwidth of 5 nm. Raman depth profiles show that the SiV centers are more likely to be formed on the near-surface areas of the diamond particles, which have poorer crystal quality and greater lattice stress than the inner areas. Complex lattice stress environment in the near-surface areas broadens the bandwidth of SiV PL peak. These results provide a feasible method to prepare diamond particles with specific crystallographic planes and stronger SiV PL.

We report supercontinuum (SC) generation in a lead silicate SF57 photonic crystal fiber by using a 1550 nm pump source. The effective nonlinear coefficient of the SF57 fiber is simulated to be 111.5 W?1centerdotkm?1 at 1550 nm. The fiber also shows ultraflat dispersion from 1700 nm to 2100 nm. Our results reveal that with an increase of the average power of the incident pulse from 10 mW to 90 mW, the SC of the SF57 photonic crystal fiber is generated from 1300 nm to 1900 nm with high stability and without significant change in spectral broadening. Refereed/Peer-reviewed