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A high performance fast-Fourier-transform (FFT) spectrum analyzer, which is developed for measure spin noise spectrums, is presented in this paper. The analyzer is implemented with a field-programmable-gate-arrays (FPGA) chip for data and command management. An analog-to-digital-convertor chip is integrated for analog signal acquisition. In order to meet the various requirements of measuring different types of spin noise spectrums, multiple operating modes are designed and realized using the reprogrammable FPGA logic resources. The FFT function is fully managed by the programmable resource inside the FPGA chip. A 1 GSa/s sampling rate and a 100 percent data coverage ratio with non-dead-time are obtained. 30534 FFT spectrums can be acquired per second, and the spectrums can be on-board accumulated and averaged. Digital filters, multi-stage reconfigurable data reconstruction modules, and frequency down conversion modules are also implemented in the FPGA to provide flexible real-time data processing capacity, thus the noise floor and signals aliasing can be suppressed effectively. An efficiency comparison between the FPGA-based FFT spectrum analyzer and the software-based FFT is demonstrated, and the high performance FFT spectrum analyzer has a significant advantage in obtaining high resolution spin noise spectrums with enhanced efficiency.

Non-polar a-plane (110) GaN films have been grown on r-plane (102) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [100] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.

Strain effects on the polarized optical properties of c-plane and m-plane InxGa1−xN were discussed for different In compositions (x = 0, 0.05, 0.10, 0.15) by analyzing the relative oscillator strength (ROS) and energy level splitting of the three transitions related to the top three valence bands (VBs). The ROS was calculated by applying the effective-mass Hamiltonian based on k · p perturbation theory. For c-plane InxGa1−xN, it was found that the ROS of |X) and |Y)-like states were superposed with each other. Especially, under compressive strain, they dominated in the top VB whose energy level also went up with strain, while the ROS of the |Z)-like state decreased in the second band. For m-plane InxGa1−xN under compressive strain, the top three VBs were dominated by |X), |Z), and |Y)-like states, respectively, which led to nearly linearly-polarized light emissions. For the top VB, ROS difference between |X) and |Z)-like states became larger with compressive strain. It was also found that such tendencies were more evident in layers with higher In compositions. As a result, there would be more TE modes in total emissions from both c-plane and m-plane InGaN with compressive strain and In content, leading to a larger polarization degree. Experimental results of luminescence from InGaN/GaN quantum wells (QWs) showed good coincidence with our calculations.

We provide the first report on the harmonics generated by an intense femtosecond vector beam that is normally incident on a solid target. By using 2D particle-in-cell (PIC) codes, we observe the third and the fifth harmonic signals with the same vector structure as the driving beam, and obtain an attosecond vector beam pulse train. We also show that the conversion efficiencies of the third and the fifth harmonics reach their maxima for a plasma density of four times the critical density due to the plasma resonating with the driving force. This method provides a new means of generating intense extreme ultraviolet (XUV) vector beams via ultra-intense laser-driven harmonics.

Harmonics generated by an intense femtosecond Gaussian laser pulse normally incident on a spiral-shaped thin foil target were studied. By using two-dimensional (2D) particle-in-cell (PIC) simulation, we observed evident odd harmonics signals in the reflection direction and found that the reflected field has a helical structure determined by the target shape. This method provides a new way to generate an intense ultraviolet vortex with high-order topological charge by use of ultrahigh intense laser-driven harmonics.

After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of growing GaN thick layer by a gas flow-modulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.

The intensity of third harmonic emission in air filamentation disturbed by copper fibers and alcohol droplets has been investigated experimentally. Enhancement of the third harmonic emission up to more than one order of magnitude has been observed. The physical mechanism of third harmonic enhancement is attributed to suppression of the destructive interference by comparison of the experimental results and it is closely related to the type, size, and relative position of the obstacles.

The remarkable experimental progress in the studies of collisionless shockwave (CS) in laboratories employing high-power lasers is briefly reviewed. The results show that CS can be generated in laser-produced plasmas due to the micro-turbulence associated with instabilities. CS is one of the most important astronomical phenomena. It has been found in supernova remnants (SNRs), Sun?Earth space, etc. This paper focuses on CS in ways relevant to SNRs. Laboratory astrophysics (LA), a new interdisciplinary frontier of astrophysics, plasma and laser physics, has developed rapidly in recent years. As an accessory to the astronomical observation, LA experimenters can closely study some astronomical events scaled-down to controllable phenomena.

The degradation mechanism of high power InGaN/GaN blue light emitting diodes (LEDs) is investigated in this paper. The LED samples were stressed at room temperature under 350-mA injection current for about 400 h. The light output power of the LEDs decreased by 35% during the first 100 h and then remained almost unchanged, and the reverse current at −5 V increased from 10−9 A to 10−7 A during the aging process. The power law, whose meaning was re-illustrated by the improved rate equation, was used to analyze the light output power-injection current (L—I) curves. The analysis results indicate that nonradiative recombination, Auger recombination, and the third-order term of carriers overflow increase during the aging process, all of which may be important reasons for the degradation of LEDs. Besides, simulating L—I curves with the improved rate equation reveal that higher-than-third-order terms of carriers overflow may not be the main degradation mechanism, because they change slightly when the LED is stressed.

Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy (HVPE), and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2D growth modes in metal-organic chemical vapour deposition (MOCVD), provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation method (GVM), developed based on the two strain states, is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.

We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between the undoped a-plane GaN buffer and Si-doped GaN layer. X-ray diffraction shows that the crystalline quality of the GaN buffer layer is greatly improved with the introduction of the SiNx interlayer. The electrical properties are also improved. For example, electron mobility and sheet resistance are reduced from high resistance to 31.6 cm2/(V?s) and 460 ?/ respectively. Owing to the significant effect of the SiNx interlayer, a-plane LEDs are realized. Electroluminescence of a nonpolar a-plane light-emitting diode with a wavelength of 488nm is demonstrated. The emission peak remains constant when the injection current increases to over 20 mA.