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The superfluid states of attractive Hubbard model in α–T 3 lattice are investigated. It is found that one usual needs three non-zero superfluid order parameters to describe the superfluid states due to three sublattices. When two hopping amplitudes are equal, the system has particle–hole symmetry. The flat band plays an important role in superfluid pairing near half filling. For example, when the filling factor falls into the flat band, the large density of states in the flat band favors superfluid pairing and the superfluid order parameters reach relatively large values. When the filling factor is in the gap between the flat band and upper band, the superfluid order parameters take small values due to the vanishing of density of states. The superfluid order parameters show nonmonotonic behaviors with the increase of filling factor. At last, we also investigate the edge states with open boundary conditions. It is shown that there exist some interesting edge states in the middle of quasi-particle bands.

The instability of p-channel low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) is investigated under negative gate bias stress (NBS) in this work. Firstly, a series of negative bias stress experiments is performed, the significant degradation behaviors in current–voltage characteristics are observed. As the stress voltage decreases from −25 V to −37 V, the threshold voltage and the sub-threshold swing each show a continuous shift, which is induced by gate oxide trapped charges or interface state. Furthermore, low frequency noise (LFN) values in poly-Si TFTs are measured before and after negative bias stress. The flat-band voltage spectral density is extracted, and the trap concentration located near the Si/SiO2 interface is also calculated. Finally, the degradation mechanism is discussed based on the current–voltage and LFN results in poly-Si TFTs under NBS, finding out that Si–OH bonds may be broken and form Si* and negative charge OH− under negative bias stress, which is demonstrated by the proposed negative charge generation model.

Electronic and optical properties of single-walled zinc oxide (ZnO) nanotubes are investigated from the first-principles calculations. Electronic structure calculations show that ZnO nanotubes are all direct band gap semiconducting nanotubes and the band gaps are relatively insensitive to the diameter and chirality of tubes. The origin of the common electronic band gaps of ZnO nanotubes is explained interms of band-folding from the two-dimensional band structure of graphite-like sheet. Moreover, the optical properties such as dielectric function and energy loss function spectra of different ZnO nanotubes are very similar, relatively independent of diameter and chirality of tubes. The calculated dielectric function and loss function spectra show a moderate optical anisotropy with respect to light polarization.

Si-doped zinc oxide (SZO) thin films are deposited by using a co-sputtering method, and used as the channel active layers of ZnO-based TFTs with single and dual active layer structures. The effects of silicon content on the optical transmittance of the SZO thin film and electrical properties of the SZO TFT are investigated. Moreover, the electrical performances and bias-stress stabilities of the single- and dual-active-layer TFTs are investigated and compared to reveal the effects of the Si doping and dual-active-layer structure. The average transmittances of all the SZO films are about 90% in the visible light region of 400 nm–800 nm, and the optical band gap of the SZO film gradually increases with increasing Si content. The Si-doping can effectively suppress the grain growth of ZnO, revealed by atomic force microscope analysis. Compared with that of the undoped ZnO TFT, the off-state current of the SZO TFT is reduced by more than two orders of magnitude and it is 1.5 × 10−12 A, and thus the on/off current ratio is increased by more than two orders of magnitude. In summary, the SZO/ZnO TFT with dual-active-layer structure exhibits a high on/off current ratio of 4.0 × 106 and superior stability under gate-bias and drain-bias stress.

Low frequency noise behaviors of partially depleted silicon-on-insulator (PDSOI) n-channel metal-oxide semiconductors (MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from 44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/Vs to 363.65 cm2/Vs. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10−10 V2Hz−1 and 2.7×10−8 V2Hz−1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017 cm−3eV−1 to 6.16×1018 cm−3eV−1. Based on carrier mobility fluctuation theory, the extracted average Hooge's parameter in these devices increases from 3.92×10−5 to 1.34×10−2 after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 Mrad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are −10.82 V and −31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

Models of threshold voltage and subthreshold swing, including the fringing-capacitance effects between the gate electrode and the surface of the source/drain region, are proposed. The validity of the proposed models is confirmed by the good agreement between the simulated results and the experimental data. Based on the models, some factors impacting the threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor (MOSFET) are discussed in detail and it is found that there is an optimum thickness of gate oxide for definite dielectric constant of gate oxide to obtain the minimum subthreshold swing. As a result, it is shown that the fringing-capacitance effect of a short-channel GeOI MOSFET cannot be ignored in calculating the threshold voltage and subthreshold swing.

The positive gate-bias temperature instability of a radio frequency (RF) sputtered ZnO thin-film transistor (ZnO TFT) is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current—voltage and capacitance—voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold-voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate—dielectric/channel interface.

In the propagation of an epidemic in a population, individuals adaptively adjust their behavior to avoid the risk of an epidemic. Differently from existing studies where new links are established randomly, a local link is established preferentially in this paper. We propose a new preferentially reconnecting edge strategy depending on spatial distance (PR-SD). For the PR-SD strategy, the new link is established at random with probability p and in a shortest distance with the probability 1 − p. We establish the epidemic model on an adaptive network using Cellular Automata, and demonstrate the effectiveness of the proposed model by numerical simulations. The results show that the smaller the value of parameter p, the more difficult the epidemic spread is. The PR-SD strategy breaks long-range links and establishes as many short-range links as possible, which causes the network efficiency to decrease quickly and the propagation of the epidemic is restrained effectively.

A novel scheme to construct a hash function based on a weighted complex dynamical network (WCDN) generated from an original message is proposed in this paper. First, the original message is divided into blocks. Then, each block is divided into components, and the nodes and weighted edges are well defined from these components and their relations. Namely, the WCDN closely related to the original message is established. Furthermore, the node dynamics of the WCDN are chosen as a chaotic map. After chaotic iterations, quantization and exclusive-or operations, the fixed-length hash value is obtained. This scheme has the property that any tiny change in message can be diffused rapidly through the WCDN, leading to very different hash values. Analysis and simulation show that the scheme possesses good statistical properties, excellent confusion and diffusion, strong collision resistance and high efficiency.

In this paper, we study worm dynamics in computer networks composed of many autonomous systems. A novel multi-group SIQR (susceptible-infected-quarantined-removed) model is proposed for computer worms by explicitly considering anti-virus measures and the network infrastructure. Then, the basic reproduction number of worm R0 is derived and the global dynamics of the model are established. It is shown that if R0 is less than or equal to 1, the disease-free equilibrium is globally asymptotically stable and the worm dies out eventually, whereas, if R0 is greater than 1, one unique endemic equilibrium exists and it is globally asymptotically stable, thus the worm persists in the network. Finally, numerical simulations are given to illustrate the theoretical results.

This paper presents a modified susceptible-infected-recovered (SIR) model with the effects of awareness and vaccination to study the epidemic spreading on scale-free networks based on the mean-field theory. In this model, when susceptible individuals receive awareness from their infected neighbor nodes, they will take vaccination measures. The theoretical analysis and the numerical simulations show that the existence of awareness and vaccination can significantly improve the epidemic threshold and reduce the risk of virus outbreaks. In addition, regardless of the existence of vaccination, the awareness can increase the spreading threshold and slow the spreading speed effectively. For a given awareness and a certain spreading rate, the total number of infections reduces with the increasing vaccination rate.

Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by the spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7×103 at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of −20 V and a drain voltage of −20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

Investigations of resonances and threshold behaviors in positron—helium scattering have been made using the momentum-space coupled-channels optical method. The positronium formation channels are considered via an equivalent-local complex potential. The s-wave resonances and the Wigner cusp feature at the positronium (n = 1) formation threshold are compared with the previous reports. The p- and the d-wave resonances and a Wigner cusp feature at the positronium (n = 2) formation threshold are reported for the first time.

Based on coupled quantum dots, we present an interesting optical effect in a four-level loop coupled system. Both the two upper levels and the two lower levels are designed to be almost degenerate, which induces a considerable dipole moment. The terahertz wave is obtained from the low-frequency component of the photon emission spectrum. The frequency of the terahertz wave can be controlled by tuning the energy levels via designing the nanostructure appropriately or tuning the driving laser field. A terahertz wave with adjustable frequency and considerable intensity (100 times higher than that of the Rayleigh line) can be obtained. It provides an effective scheme for a terahertz source.

An application of the coupled-channels optical method is given for the energy-dependent phenomena of positron-hydrogen resonances below the n = 2 excitation threshold. The equivalent local optical potential is used to account for the target polarization and positronium formation. The calculation includes 9 explicitly physical coupled channels. The lowest S-wave resonance energy position and new resonances are found. Angular dependence of the cross section in the resonance region are investigated.