1. Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes.
- Author
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Zhi-Hui Wang, Xiao-Lan Wang, Jun-Lin Liu, Jian-Li Zhang, Chun-Lan Mo, Chang-Da Zheng, Xiao-Ming Wu, Guang-Xu Wang, and Feng-Yi Jiang
- Subjects
QUANTUM well lasers ,LIGHT emitting diodes ,METAL organic chemical vapor deposition ,ATOMIC force microscopy ,STRAY currents - Abstract
InGaN-based green light-emitting diodes (LEDs) with different green quantum well numbers grown on Si (111) substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7. [ABSTRACT FROM AUTHOR]
- Published
- 2018
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