Search

High-brightness tapered lasers with photonic crystal structures are designed and fabricated. A narrow taper angle is designed for the tapered section. The device delivers an output power of 3.3 W and a maximum wall-plug efficiency of 43%. The vertical beam divergence is around 11° at different currents. Nearly diffraction-limited beam qualities for the vertical and lateral directions are obtained. The lateral beam quality factor M 2 is below 2.5 and the vertical M 2 value is around 1.5 across the whole operating current range. The maximum brightness is 85 MW·cm−2sr−1. When the current is above 3.3 A, the brightness is still above 80 MW·cm−2sr−1. [ABSTRACT FROM AUTHOR]

The coupling efficiency of the beam combination and the fiber-coupled module is limited due to the large vertical divergent angle of conventional semiconductor laser diodes. We present a high coupling efficiency module using photonic-band-crystal (PBC) laser diodes with narrow vertical divergent angles. Three PBC single-emitter laser diodes are combined into a fiber with core diameter of 105 μm and numerical aperture of 0.22. A high coupling efficiency of 94.4% is achieved and the brightness is calculated to be 1.7 MW/(cmsr) with the injection current of 8 A. [ABSTRACT FROM AUTHOR]

The single and coupled photonic crystal nanocavity lasers are fabricated in the InGaAsP material system and their static and dynamic features are compared. The coupled-cavity lasers show a larger lasing efficiency and generate an output power higher than the single-cavity lasers, results that are consistent with the theoretical results obtained by rate equations. In dynamic regime, the single-cavity lasers produce pulses as short as 113 ps, while the coupled-cavity lasers show a significantly longer lasing duration. These results indicate that the photonic crystal laser is a promising candidate for the light source in high-speed photonic integrated circuit. [ABSTRACT FROM AUTHOR]

A single mode hybrid III–V/silicon on-chip laser based on the flip-chip bonding technology for on-chip optical interconnection is demonstrated. A single mode Fabry—Pérot laser structure with micro-structures on an InP ridge waveguide is designed and fabricated on an InP/AlGaInAs multiple quantum well epitaxial layer structure wafer by using i-line lithography. Then, a silicon waveguide platform including a laser mounting stage is designed and fabricated on a silicon-on-insulator substrate. The single mode laser is flip-chip bonded on the laser mounting stage. The lasing light is butt-coupling to the silicon waveguide. The laser power output from a silicon waveguide is 1.3mW, and the threshold is 37mA at room temperature and continuous wave operation. [ABSTRACT FROM AUTHOR]