1. Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates.
- Author
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Pan Hong-Liang, Jin Zhi, Ma Peng, Guo Jian-Nan, Liu Xin-Yu, Ye Tian-Chun, Li Jia, Dun Shao-Bo, and Feng Zhi-Hong
- Subjects
GRAPHENE ,FIELD-effect transistors ,SILICON carbide ,BENZOCYCLOBUTENE ,ATOMIC layer deposition ,DIELECTRICS ,WAFER-scale integration of circuits - Abstract
Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al
2 O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 μm, are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits. [ABSTRACT FROM AUTHOR]- Published
- 2011
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