1. Chemical Vapour Deposition Graphene Radio-Frequency Field-Effect Transistors.
- Author
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Ma Peng, Jin Zhi, Guo Jian-Nan, Pan Hong-Liang, Liu Xin-Yu, Ye Tian-Chun, Wang Hong, and Wang Guan-Zhong
- Subjects
CHEMICAL vapor deposition ,GRAPHENE ,RADIO frequency ,FIELD-effect transistors ,COMPOSITE materials ,BENZOCYCLOBUTENE ,DIELECTRICS - Abstract
We report the dc and rf performance of graphene rf field-effect transistors, where the graphene films are grown on copper by using the chemical vapour deposition (CVD) method and transferred to SiO
2 /Si substrates. Composite materials, benzocyclobutene and atomic layer deposition Al2 O3 are used as the gate dielectrics. The observation of n- and p-type transitions verifies the ambipolar characteristics in the graphene layers. While the intrinsic carrier mobility of CVD graphene is extracted to be 1200 cm2 /V·s, the parasitic series resistances are demonstrated to have a serious impact on device performance. With a gate length of 1 µm and an extrinsic transconductance of 72 mS/mm, a cutoff frequency of 6.6 GHz and a maximum oscillation frequency of 8.8 GHz are measured for the transistors, illustrating the potential of the CVD graphene for rf applications. [ABSTRACT FROM AUTHOR]- Published
- 2012
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