Search

Two-dimensional electron gas (2DEG) with high electron mobility is highly desired to study the emergent properties and to enhance future device performance. Here we report the formation of 2DEG with high mobility at the interface between rock-salt BaO and perovskite SrTiO3. The interface consists of the ionically compensated BaO1 â€" δ layer and the electronically compensated TiO2 layer, which is demonstrated as a perfect interface without lattice mismatch. The so-formed interface features metallic conductivity with ultralow square resistance of 7.3 Ă— 10âˆ'4 Ω/â—» at 2 K and high residual resistance ratios R 300 K/ R 2 K up to 4200. The electron mobility reaches 69000 cm2â‹...Vâˆ'1â‹...sâˆ'1 at 2 K, leading to Shubnikovâ€"de Haas oscillations of resistance. Density functional theory calculations reveal that the effective charge transfers from BaO to the Ti 3 dxy orbital occur at the interface, leading to the conducting TiO2 layer. Our work unravels that BaO can adapt itself by removing oxygen to minimize the lattice mismatch and to provide substantial carriers to SrTiO3, which is the key to forming 2DEGs with high mobility at the interfaces. [ABSTRACT FROM AUTHOR]

We present the superconducting (SC) property and high-robustness of structural stability of kagome CsV3Sb5 under in situ high pressures. For the initial SC-I phase, its Tc is quickly enhanced from 3.5 K to 7.6 K and then totally suppressed at P ∼ 10 GPa. With further increasing pressure, an SC-II phase emerges at P ∼ 15 GPa and persists up to 100 GPa. The Tc rapidly increases to the maximal value of 5.2 K at P = 53.6 GPa and slowly decreases to 4.7 K at P = 100 GPa. A two-dome-like variation of Tc in CsV3Sb5 is concluded here. The Raman measurements demonstrate that weakening of E2g mode and strengthening of E1g mode occur without phase transition in the SC-II phase, which is supported by the results of phonon spectra calculations. Electronic structure calculations reveal that exertion of pressure may bridge the gap of topological surface nontrivial states near EF, i.e., disappearance of Z2 invariant. Meanwhile, the Fermi surface enlarges significantly, consistent with the increased carrier density. The findings here suggest that the change of electronic structure and strengthened electron-phonon coupling should be responsible for the pressure-induced reentrant SC. [ABSTRACT FROM AUTHOR]