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We demonstrate that the extreme ultraviolet free induction decay emission can be significantly enhanced by employing isolated attosecond pulses. In this work, the near infrared pulses are applied to excite the neon atoms into Rydberg states coherently, and isolated attosecond pulses are used to manipulate the populations of the Rydberg states and the subsequent free induction decay process. The time resolved experimental measurement of the dependence of the resonance emission yield would help to understand the buildup dynamics of population of excited states. The enhancement assisted by attosecod pulses can serve as a mechanism to develop high-flux extreme ultraviolet light sources.

We demonstrated the generation and characterization of 9.7 fs, 180 μJ pulses centered at 385 nm via the frequency doubling of few-cycle near-infrared pulses. Both moderate conversion efficiency (9.5%) and broad phase matching bandwidth (20 nm) were achieved by shaping the spectra of the fundamental pulses. The strong intensity dependence of second-order harmonic generation and well controlled material dispersion ensured the inexistence of satellite pulses, which was confirmed by the self-diffraction frequency resolved optical gating measurement.

Isolated attosecond pulses with a duration of 88 as are generated in the spectral range of 29–72 eV using double optical gating technique. The gate width is set to be shorter than half the optical cycle to avoid carrier envelop phase stabilization of the 4.2 fs driving laser pulses centered at 800 nm. The attosecond pulse duration is measured with the technique of frequency resolved optical gating for complete reconstruction of attosecond bursts.

We explore the excitonic effects in chiral graphene nanoribbons (cGNRs), whose edges are composed alternatively of armchair-edged and zigzag-edged segments. For cGNRs dominated by armchair edges, their energy gaps and exciton energies decrease with increasing chirality angles, and they, as functions of widths, oscillate with the period of three, while the exciton binding energies do not have such distinct oscillation. On the other hand, for cGNRs dominated by zigzag edges, all the energy gaps, exciton energies, and exciton binding energies show oscillation properties with their widths, due to the interactions between the edge states localized at the opposite zigzag edges. In addition, the triplet excitons are energy degenerate when the electrons are spin-unpolarized, while the degeneracy split when the electrons are spin-polarized. All the studied cGNRs show strong excitonic effects with the exciton binding energies of hundreds of meV.

Ti/Al based Ohmic contacts to as-grown N-polar GaN are investigated by cross-section transmission electron microscopy and energy dispersive x-ray spectroscopy. Due to the higher oxygen background doping in the N-polar GaN, the Al metal in Ohmic stacks is found to react with background oxygen more easily, resulting in more AlOx. In addition, the formation of AlOx is affected by the Al layer thickness greatly. The AlOx combined with the presence of AlN is detrimental to the Ohmic contacts for N-polar GaN compared with Ga-polar GaN. With the reduction of the Al layer thickness to some extent, less AlOx and AlN are formed, and lower Ohmic contact resistance is obtained. The lowest contact resistivity ρ of 1.97 × 10−6 Ωcm2 is achieved with the Al layer thickness of 80 nm.

With surface chemical modification, we have obtained core-shell structure ZnO nanoparticles. The nonresonant third-order nonlinear optical refraction of this new composite material was found to be -3.8 × 10-10 esu by Z-scan measurements with a femtosecond pulsed laser. The ultrafast nonlinear response time similar 250 fs measured by time-resolved pump-probe techniques suggests that the nonlinearity of this new material originates mainly from a rapid electronic polarization process or virtual process such as the optical Stark effect.

Spinel oxide MgTi2O4 is synthesized by the spark plasma sintering method. The temperature dependences of magnetic susceptibility and resistance are measured and investigated in detail. It is shown that the transition of MgTi2O4 occurs at the phase transition temperature Tt ~ 258 K. The fits of resistance versus temperature curve demonstrate that MgTi2O4 displays metal behavior above Tt, while a dual conducting mechanism, the Mott-insulator-like variable range hopping and normal activated conduction, is suggested to be responsible for the transport behavior of MgTi2O4 below Tt.

We report a compact high power Tm,Ho:YAG laser nearly at room temperature. The laser-diode side-pumped Tm:YAG and Tm,Ho:YAG laser modules are operated in the same cavity. The laser yields 37.34 W of continuous wave output power under the temperature of 6°C, corresponding to a maximum slope efficiency of 16.7% when the output power lies from 5.1 W to 27.0 W. This is the first report on the combined Tm:YAG and Tm,Ho:YAG lasers for obtaining high power 2.1 μm laser.

The injection and transport characteristics of electrons are enhanced by using sodium chloride (NaCl) as an n-type dopant doped into a 4,7-diphnenyl-1, 10-phe-nanthroline (Bphen) electron-transporting layer, which improves the performance of organic light-emitting diodes (OLEDs). Meanwhile, a NaCl-doped Bphen layer can effectively influence electrical characteristics of the devices, and significantly improve the current and power efficiency. The turn-on voltage and the operation voltage of the optimal device are decreased drastically from 6.5 V and 10.8 V to 3.3 V and 5 V, respectively, compared with those of the reference device. The maximum current efficiency and power efficiency of the optimal device are 7.0 cd/A and 4.4 lm/W at the current density of 16.70 mA/cm2, which are about 1.7 and 4 times higher than those of the reference device, respectively. Moreover, the enhancement of the injection and transport ability for electrons is attributed not only to the reduced energy barrier between Al cathode and Bphen, but also to the increased mobility of electrons by the doping effect of NaCl. Therefore, both the electron injection and transport ability are enhanced, which improve the carrier balance in OLEDs and lead to the better device efficiency.

We experimentally investigate the terahertz (THz) generation from a graphite surface induced by femtosecond laser pulses, and systematically study the dependence on the excitation power, the crystal orientation of graphite, polarization state and incident angle of optical beam. New evidence related to excitation and detection geometry is found and presented, which supports the THz generation mechanism of transient photocarrier transporting along the basal plane normal. Our observation also suggests other probable contributions by in-plane charge oscillations. The results may be helpful to explore and understand the photoelectric properties of graphite and other allotropes of carbon.

Crack free GaN films were grown on 1200×1200μm2 patterned Si (111) substrates and 36 light emitting diodes (LEDs) were fabricated in each pattern unit. Spatial distribution of the tensile stress in the pattern units and its influence on the LED performance are studied by micro-Raman and electroluminescence (EL). The Raman shift of the GaN E2 mode shows that the tensile stress is the maximum at the center, partially relaxed at the edge, and further relaxed at the corner. With the stress relaxation, the EL wavelength has a significant blue shift and the luminous intensity shows a great enhancement.

We present transport characterizations of a fully tunable double quantum dot over the few electron number down to zero, which is defined by means of surface gates on top of a GaAs/AlGaAs heterostructure. We also perform numerical simulations to map out the charge stability diagram, which is consistent with the measurements. The results demonstrate that the electric control in the double dot can be significantly enhanced by improving the design of the device structure, which provides potential advantages for quantum information processing.

We demonstrate how molecular states of coupled graphene quantum dots are probed in transport experiments. The applied method measures the sequential tunneling of electrons through the double dot and hence resolves the molecular state transport channel simultaneously. The overlap of the two dots' wavefunctions, and in turn, the tunnel coupling between the two dots are controlled by the local gates. These results imply the relevance of our graphene device for implementing a quantum manipulation by adjusting the electrodes.

We investigate the dependence of elliptic flows $v_2$ on transverse momentum $P_T$ for charged hadrons produced in nucleus-nucleus collisions at high energy by using a multi-source ideal gas model which includes the interaction contribution of the emission sources. Our calculated results are approximately in agreement with the experimental data over a wider $P_T$ range from the STAR and ALICE Collaborations. It is found that the expansion factor increases linearly with the impact parameter from most central (0-5%) to mid-peripheral (35-40%) collisions.

We study the exclusive semileptonic and nonleptonic decays of the first radial excited heavy-light pseudoscalars Dq(2S) and Bq(2S) (q = u, d, s) with the improved Bethe—Salpeter (B-S) method which takes into account the relativistic effects in wave functions and transition matrix elements.

We systematically study the decay properties of the K-shell excited F-like ions with 10≤Z≤36 based on the multiconfiguration Dirac—Fock method. The Breit interaction, the QED corrections and the nuclear finite mass effects are also considered as perturbation. Auger transition rates, radiative, Auger and natural widths, as well as fluorescence and Auger yields for K-shell excited F-like ions are presented. It is shown by means of concrete figures that the decay properties change significantly with the increase of the atomic number Z; the Auger rate is overtaken at Z = 30 by the radiative decay rate. Several fitting formulae for the radiative and Auger widths and the fluorescence yields have been evaluated which is expected to be useful in plasma analysis and plasma modeling.

We propose an effective method to design the working parameters of a pulse-driven charge qubit implemented with double quantum dot. It is shown that intrinsic qubit population leakage to undesired states in the control and measurement process can be determined by the simulation of coherent dynamics of the qubit and minimized by choosing proper working parameters such as pulse shape. The result demonstrated here bodes well for future quantum gate operations and quantum computing applications.

We investigate the worm spreading process in mobile ad hoc networks with a susceptible-infected-recovered model on a two-dimensional plane. A medium access control mechanism operates within it, inhibiting transmission and relaying a message by using other nodes inside the node's transmitting circle during speaking. We measure the rewiring probability p with the transmitting range r and the average relative velocity of the moving nodes, and map the problem into a directed dynamic small-world network. A new scaling relation for the recovered portion of the nodes reveals the effect caused by geometric distance, which has been ignored by previous models.

According to the theory of optical films, we simulate the reflectivity of antireflection coatings (ARCs) for solar cells of Ga0.5In0.5P/GaAs/Ge based on an optical transfer matrix. In order to provide sufficient consideration of the refractive index dispersion effect of multilayer ARCs, we use multi-dimensional matrix data for reliable simulation. After the reflection curves are obtained, the effective average reflectance Re is introduced to optimize the film system by minimizing Re. Optimization of single layer (Al2O3), double layer (MgF2/ZnS) and triple layer (MgF2/Al2O3/ZnS) ARCs is realized by using this method for space and terrestrial applications. Effects of these ARCs are compared after optimization. These theoretical parameters can be used to guide experiments.