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Finite elements methods are used to investigate the thermal-electrical characteristics of gallium-nitride (GaN) light-emitting diodes (LEDs) with different transparent conductive layers (TCLs) and buried depths of electrodes, where the transparent conductive layers include indium tin oxide (ITO), graphene (Gr) and the combination of them (ITO/Gr). The optimal material parameters and the precision and accuracy of the simulation model are validated. Moreover, the parameters' sensitivity analysis is carried out as well. The results indicate that the LED with the TCL of a 100-nm ITO or 4-layer Gr has a good thermal-electrical performance from the viewpoint of the maximum temperature and the current density deviation of multiple quantum well (MQW), where the maximum temperature occurs at the n-Pad rather than p-Pad. The compound TCL with a 20-nm ITO and 3-layer Gr reaches a thermal-electrical performance better than that of a 100-nm ITO or 4-layer Gr. Moreover, their maximum temperatures decrease about −0.43% and 1.21%, and the current density uniformities increase up to −6.09% and 17.41%, respectively. Furthermore, when the electrode buried depth is 0.51 μm, the thermal-electrical performance of the GaN LEDs can be further improved. [ABSTRACT FROM AUTHOR]

The thermal-electrical characteristic of a GaN light-emitting diode (LED) with the hybrid transparent conductive layers (TCLs) of graphene (Gr) and NiOx is investigated by a finite element method. It is indicated that the LED with the compound TCL of 3-layer Gr and 1 nm NiOx has the best thermal-electrical performance from the view point of the maximum temperature and the current density deviation of multiple quantum wells, and the maximum temperature occurs near the n-electrode rather than p-electrode. Furthermore, to depress the current crowding on the LED, the electrode pattern parameters including p- and n-electrode length, p-electrode buried depth and the distance of n-electrode to active area are optimized. It is found that either increasing p- or n-electrode length and buried depth or decreasing the distance of n-electrode from the active area will decrease the temperature of the LED, while the increase of the n-electrode length has more prominent effect. Typically, when the n-electrode length increases to 0.8 times of the chip size, the temperature of the GaN LED with the 1 nm NiOx/3-layer-Gr hybrid TCLs could drop about 7 K and the current density uniformity could increase by 23.8%, compared to 0.4 times of the chip size. This new finding will be beneficial for improvement of the thermal-electrical performance of LEDs with various conductive TCLs such as NiOx/Gr or ITO/Gr as current spreading layers. [ABSTRACT FROM AUTHOR]