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Exploring efficient and robust photocatalysts for solar hydrogen generation from water reduction is great significant in solving the energy shortage and environment contamination simultaneously. Herein, benefiting from the matchable energy band structures and band bending, the direct Z-scheme ZnIn 2 S 4 /NiWO 4 heterojunctions were successfully constructed by anchoring p-type NiWO 4 nanoparticles onto n-type ZnIn 2 S 4 nanosheets through a facile sonochemical route. By carefully regulating the interfacial structure, the optimized ZnIn 2 S 4 /NiWO 4 heterostructure without any cocatalyst displays excellent stability and remarkably improved photocatalytic hydrogen evolution activity (16.3 mmol∙g−1∙h−1), more 3.57-folds increment than bare ZnIn 2 S 4 photocatalyst. Mechanistic characterizations demonstrate that the dramatically boosted photocatalytic performance mainly results from the constructed Z-scheme heterostructure and intimately interfacial contact between ZnIn 2 S 4 and NiWO 4 , which results in the valid interfacial charge transfer channels, powerful redox potential and reduced hydrogen evolution energy barrier, as confirmed by the joint analysis of electron spin resonance (ESR) and photoelectrochemical measurements. More importantly, the photoinduced holes of ZnIn 2 S 4 are rapidly and effectively consumed in the unique Z-scheme charge transfer channels, which greatly favors the suppression of the photocorrosion caused by insufficient hole extraction during the photocatalytic reaction, thereby promoting the overall stability and reusability of the ZnIn 2 S 4 /NiWO 4 composite photocatalyst. This study paves the way for constructing other Z-scheme nano-heterostructure consisting of p-type and n-type semiconductors with efficient photoactivity and robust stability for energy and environmental applications. [Display omitted] • Z-scheme heterojunction consisting of p-type and n-type semiconductors was designed. • Mechanism for the enhanced photoactivity over ZnIn 2 S 4 /NiWO 4 heterojunction discussed. • High H 2 -production rate achieved over heterojunction, 3.57-fold higher than ZnIn 2 S 4. [ABSTRACT FROM AUTHOR]