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Low-frequency noise modeling and estimation is a critical issue in the design of analog and digital circuits, especially for short-channel CMOS technologies. The conventional noise models do not fit the experimental results adequately at frequencies close to DC for amplifiers and close to the carrier frequency for oscillators. Furthermore, measuring this noise necessitates the use of specialized and expensive equipment. In this paper, the bound of carrier trapping and releasing are extracted while examining the characteristics of low-frequency noise using the EMD method, and an innovative model based on carrier number fluctuations is proposed. The method introduces a low-cost measurement system for low=frequency noise. The performance accuracy of this measurement system and the proposed model is evaluated and compared with conventional noise modeling methods. The evaluation results demonstrate the success of the proposed measurement setup and model in estimating near-DC noise. [ABSTRACT FROM AUTHOR]