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Summary form only. At present the better part of coordinate-sensitive photodetectors is based on longitudinal photo-voltage effect in p-n junction. The linear range of their sensitivity via coordinate of illuminated region is limited by the diffusion length of non-equilibrium carriers for the semiconductor sensitive cell and does not exceed 2 mm. We present a new coordinate-sensitive photodetector design. Our device is based on detecting a magnetic part of the electromagnetic radiation from the semiconductor surface illuminated by interband light. The electromagnetic radiation is produced by currents of non-equilibrium carriers moving outside the region of the light excitation and separated by a surface barrier.

Summary form only given. A simple non-destructive method for characterising SiC samples (Lely-crystals, CREE-substrates, and epitaxial films) is presented. The observed ultraviolet differential reflection spectra of SiC samples were compared with a pure Lely-crystal (model sample) to estimate the structural quality of the sample. The method presented is based on a differential study of ultraviolet reflection spectra of SiC films in comparison with a perfect Lely-crystal.