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Low loss phase modulator arrays with 1x16 splitters are demonstrated on a gallium arsenide platform that is suitable for monolithic integration with gain. Measured modulator Vπ∙L efficiency is 0.7 V∙cm at 1030 nm.

GaAs/InGaAs quantum-well micro-disk lasers on silicon realized by selective area heteroepitaxy is reported. The laser is grown in a 15-µm-wide silicon dioxide recess and demonstrates a threshold of 400 µW and emission at 940 nm.

InGaAs photodiode arrays were realized on Si by heteroepitaxy, demonstrating a dark current as low as 5.71 nA at -1 V and responsivity as high as 0.64 A/W at 1550 nm and at room temperature.

An integrated indium phosphide transmitter is demonstrated for free space optical communications. The transmitter tunes from 1521 nm to 1565 nm, demonstrates performance up to 5 Gbps, and includes an output high-power semiconductor optical amplifier.

A Vernier-based LiDAR transceiver for high side-mode suppression optical phased arrays is proposed and investigated. This architecture enables side-lobe-free 180° viewing angle with multiple-wavelength waveguide spacing thereby easing fabrication requirements.

A 3D integrated hybrid silicon laser was demonstrated with tuning range of 30 nm, a side-mode suppression ratio of 34 dB, optical output power of 2 mW, and peak relative intensity noise of −135 dB/Hz.

We propose a compact on-chip fan-out for multicore fiber using a focusing grating coupler array realized on a single-etch silicon nitride platform. Coupling loss of 11 dB with a 3-dB bandwidth of 30 nm and channel crosstalk lower than 28 dB are demonstrated.

A method of hybrid integration using grating couplers is demonstrated providing a way to utilized high speed InP photodetectors in silicon photonics. Responsivity measurements before and after bonding are reported to quantify coupling efficiency.