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1. Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field

Author

Wenkai Liu, Songsong Chen, Yun Liu, Zhican Wen, Fuman Jiang, Zhongying Xue, Xing Wei, and Yuehui Yu

Subjects
General Materials Science, General Chemistry, Condensed Matter Physics
Abstract

A method including a polynomial fitting step was proposed for crystallization interface correction of Czochralski crystal growth simulation, which can obtain an axisymmetric interface under a non-axisymmetric flow when the crystal rotates.

Published
2023
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