1. Large-scale chemical vapor deposition growth of highly crystalline MoS2 thin films on various substrates and their optoelectronic properties
- Author
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Yeong Hwan Ahn, Soonil Lee, Seongju Ha, Van Tu Nguyen, Dong-Il Yeom, and Ji-Yong Park
- Subjects
010302 applied physics ,Electron mobility ,Materials science ,business.industry ,General Physics and Astronomy ,02 engineering and technology ,Chemical vapor deposition ,021001 nanoscience & nanotechnology ,01 natural sciences ,symbols.namesake ,chemistry.chemical_compound ,chemistry ,0103 physical sciences ,Monolayer ,symbols ,Sapphire ,Optoelectronics ,General Materials Science ,Field-effect transistor ,Thin film ,0210 nano-technology ,Raman spectroscopy ,business ,Molybdenum disulfide - Abstract
Large-scale growth of mostly monolayer molybdenum disulfide (MoS2) on quartz, sapphire, SiO2/Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS2 is monolayer with high quality and uniformity. The MoS2 field effect transistors based on the as-grown MoS2 exhibit carrier mobility of 1–2 cm2V−1s−1 and On/Off ratio of ~104 while showing large photoresponse. Our results provide a simple approach to realize MoS2 on various substrates for electronics and optoelectronics applications.
- Published
- 2019