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Abstract: We have fabricated indium–gallium–zinc (IGZO) thin film transistor (TFT) using SiO x interlayer modified aluminum oxide (AlO x ) film as the gate insulator and investigated their electrical characteristics and bias voltage stress. Compared with IGZO-TFT with AlO x insulator, IGZO-TFT with AlO x /SiO x insulator shows superior performance and better bias stability. The saturation mobility increases from 5.6 cm2/V s to 7.8 cm2/V s, the threshold voltage downshifts from 9.5 V to 3.3 V, and the contact resistance reduces from 132 Ωcm to 91 Ωcm. The performance improvement is attributed to the following reasons: (1) the introduction of SiO x interlayer improves the insulator surface properties and leads to the high quality IGZO film and low trap density of IGZO/insulator interface. (2) The better interface between the channel and S/D electrodes is favorable to reduce the contact resistance of IGZO-TFT. [Copyright &y& Elsevier]

Abstract: The bias stress effect in pentacene thin-film transistors (TFTs) with and without MoOx interlayer was characterized. The device without MoOx interlayer showed a large threshold voltage shift of 5.1 V after stressing with a constant gate-source voltage of −40 V for 10000 s, while at the same condition, the device with MoOx interlayer showed a low threshold voltage shift of 1.9 V. The results can be attributed to the stable interface between MoOx/pentacene and small contact resistance change for the device with MoOx/Cu electrode. Pentacene-TFTs with MoOx interlayer showed a high field-effect mobility of 0.61 cm2/V s and excellent bias stability, which could be a significant step toward the commercialization of OTFT technology. [Copyright &y& Elsevier]